IGBT Transistors - Kaimeite

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IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
	IRG4BC30SPBF	1+ $2.260 10+ $1.920 100+ $1.540 500+ $1.340		PDF RFQ	363 In-stock	Infineon Technologies	IGBT Transistors 600V DC-1 KHZ (STD) DISCRETE IGBT	Through Hole	TO-220-3	+ 150 C	Tube	100 W	Single	600 V	1.4 V	34 A	100 nA	+/- 20 V
	APT45GP120J	1+ $37.280 2+ $36.260 5+ $35.260 10+ $34.250		PDF RFQ	13 In-stock	Microsemi	IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS...	Screw	SOT-227-4	+ 150 C		329 W	N-Channel	1.2 kV	3.3 V	34 A	100 nA	+/- 20 V