PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
IRG4PC30SPBF	1+ $2.750 10+ $2.340 100+ $2.030 250+ $1.920		PDF RFQ	272 In-stock	IR / Infineon	IGBT Transistors 600V DC-1kHz	Through Hole	TO-247-3		Tube	100 W	Single	600 V	1.6 V	34 A		+/- 20 V
IRG4BC30SPBF	1+ $2.260 10+ $1.920 100+ $1.540 500+ $1.340		PDF RFQ	363 In-stock	Infineon Technologies	IGBT Transistors 600V DC-1 KHZ (STD) DISCRETE IGBT	Through Hole	TO-220-3	+ 150 C	Tube	100 W	Single	600 V	1.4 V	34 A	100 nA	+/- 20 V
AUIRG4BC30SSTRL	1+ $3.030 10+ $2.570 100+ $2.230 250+ $2.110 800+ $1.590		PDF RFQ	198 In-stock	IR / Infineon	IGBT Transistors 600V AUTO DC-1 KHZ DISCRETE IGBT	SMD/SMT	D-PAK-3		Reel	100 W		600 V	1.6 V	34 A
IXBF20N300	1+ $44.390 5+ $43.410 10+ $41.420 25+ $39.680		PDF RFQ	18 In-stock	IXYS	IGBT Transistors	Through Hole	ISOPLUS-i4-3	+ 150 C	Tube	150 W	Single	3 kV	2.7 V	34 A		+/- 20 V
AUIRG4BC30S-S	1+ $3.040 10+ $2.580 100+ $2.240 250+ $2.120		PDF RFQ	300 In-stock	Infineon Technologies	IGBT Transistors 600V AUTO DC-1 KHZ DISCRETE IGBT	SMD/SMT	D-PAK-3		Tube	100 W	Single	600 V	1.6 V	34 A		+/- 20 V
APT45GP120J	1+ $37.280 2+ $36.260 5+ $35.260 10+ $34.250		PDF RFQ	13 In-stock	Microsemi	IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS...	Screw	SOT-227-4	+ 150 C		329 W	N-Channel	1.2 kV	3.3 V	34 A	100 nA	+/- 20 V
AUIRG4BC30SSTRR		GET PRICE VIEW	PDF RFQ		IR / Infineon	IGBT Transistors 600V AUTO DC-1 KHZ DISCRETE IGBT	SMD/SMT	D-PAK-3		Reel	100 W		600 V	1.6 V	34 A