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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
HGTG18N120BND
1+
$6.570
10+
$5.940
25+
$5.670
100+
$4.920
RFQ
220
In-stock
Fairchild Semiconductor IGBT Transistors 54A 1200V N-Ch w/Ant Parallel Hyprfst Dde Through Hole TO-247-3 + 150 C Tube 390 W Single 1200 V 2.45 V 54 A +/- 250 nA +/- 20 V
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