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Pd - Power Dissipation :
Collector- Emitter Voltage VCEO Max :
Collector-Emitter Saturation Voltage :
Gate-Emitter Leakage Current :
Maximum Gate Emitter Voltage :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
HGTG18N120BND
1+
$6.570
10+
$5.940
25+
$5.670
100+
$4.920
RFQ
220
In-stock
Fairchild Semiconductor IGBT Transistors 54A 1200V N-Ch w/Ant Parallel Hyprfst Dde Through Hole TO-247-3 + 150 C Tube 390 W Single 1200 V 2.45 V 54 A +/- 250 nA +/- 20 V
APT25GT120BRDQ2G
1+
$9.250
10+
$8.320
25+
$7.580
50+
$7.060
RFQ
1,862
In-stock
Microsemi IGBT Transistors Insulated Gate Bipolar Transistor - NPT Med Frequ... Through Hole TO-247-3 + 150 C   347 W Single 1.2 kV 3.2 V 54 A 120 nA 30 V
APT25GT120BRG
1+
$7.320
10+
$6.590
25+
$6.000
100+
$5.420
RFQ
125
In-stock
Microsemi IGBT Transistors Insulated Gate Bipolar Transistor - NPT Med Frequ... Through Hole TO-247-3 + 150 C Tube 347 W Single 1.2 kV 3.2 V 54 A 120 nA 30 V
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