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22 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Product | Vf - Forward Voltage | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Series | Packaging | Number of Channels | If - Forward Current | Length | Width | Height | Pd - Power Dissipation | Configuration | Ir - Reverse Current | Ifsm - Forward Surge Current | Technology | Transistor Polarity | Collector- Base Voltage VCBO | Emitter- Base Voltage VEBO | Collector-Emitter Saturation Voltage | Gain Bandwidth Product fT | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Channel Mode | Tradename | DC Collector/Base Gain hfe Min | Continuous Collector Current | Rise Time | Fall Time | Transistor Type | Product Type | Package | Types of | Typical Turn-Off Delay Time | Typical Turn-On Delay Time | Subcategory | Product Category | Factory packaging quantity | unit weight | Factory Pack Quantity | RoHS | Id - Continuous Drain Curren | trademark | Vds-drain source breakdown voltage | Id-continuous drain current | Rds On-drain source on-resistance | Pd-power dissipation | Typical shutdown delay time | Typical on-delay time | Widt | range of working temperature | Vrrm - Repeated reverse voltage | Humidity sensitivity | DC Current Gain hFE Max | |
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GET PRICE |
11,150
In-stock
|
onsemi | MOSFET 30V Dual SyncFET | 16 V, 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Cut Tape | 2 Channel | 4.9 mm | 3.9 mm | 1.75 mm | 2 W | Dual | Si | N-Channel | 30 V | 6.5 A | 29 mOhms | Enhancement | 4.5 ns, 5 ns | 2.5 ns, 11 ns | 2 N-Channel | 20 ns, 25 ns | 7 ns, 8 ns | 2500 | ||||||||||||||||||||||||||||||||||||||
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GET PRICE |
6,551
In-stock
|
Toshiba Semiconductor | MOSFET 220NIS2 PLN,DISCON(08-10)/PHASE-OUT(11-01)/OB... | 30 V | SMD/SMT | SC-62-3 | - 55 C | + 150 C | Reel | 1 Channel | 4.6 mm | 2.5 mm | 1.6 mm | 40 W | Single | Si | N-Channel | 500 V | 12 A | 520 mOhms | Enhancement | 22 ns | 36 ns | 1 N-Channel | 50 | ||||||||||||||||||||||||||||||||||||||||
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GET PRICE |
7,128
In-stock
|
Toshiba Semiconductor | MOSFET N-Ch 500V 15A Rdson 0.4 Ohm | Through Hole | TO-3PN-3 | 1 Channel | 15.5 mm | 4.5 mm | 20 mm | Single | Si | N-Channel | 500 V | 15 A | 400 mOhms | MOSFETs | 50 | ||||||||||||||||||||||||||||||||||||||||||||||||
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GET PRICE |
17,500
In-stock
|
Toshiba Semiconductor | MOSFET | 1 Channel | 2.9 mm | 1.5 mm | 1.1 mm | Single | Si | P-Channel | 1 P-Channel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
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GET PRICE |
8,555
In-stock
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Renesas Electronics | MOSFET Power MOSFET | Si | Tube | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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GET PRICE |
23,351
In-stock
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Toshiba Semiconductor | MOSFET | 1 Channel | Single | Si | N-Channel | 1 N-Channel | Toshiba | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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GET PRICE |
17,735
In-stock
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Toshiba Semiconductor | MOSFET | 1 Channel | Single | Si | N-Channel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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GET PRICE |
7,855
In-stock
|
Toshiba Semiconductor | MOSFET N-Ch 60V 25A Rdson 0.046 Ohm | 1 Channel | 10 mm | 4.5 mm | 15 mm | Single | Si | N-Channel | 50 | 60 V | 25 A | 46 mOhms | |||||||||||||||||||||||||||||||||||||||||||||||||||
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GET PRICE |
4,199
In-stock
|
Toshiba Semiconductor | MOSFET 220SM PLN,ACTIVE,DISCON(08-10)/PHASE-OUT(1... | 1 Channel | Single | Si | N-Channel | MOSFET | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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GET PRICE |
7,335
In-stock
|
Toshiba Semiconductor | MOSFET MOLD PLN,ACTIVE,DISCON(05-04)/PHASE-OUT(... | PW-Mold-3 | 1 Channel | 6.5 mm | 5.5 mm | 2.3 mm | Single | Si | N-Channel | 1 N-Channel | MOSFETs | ||||||||||||||||||||||||||||||||||||||||||||||||||||
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GET PRICE |
8,755
In-stock
|
Toshiba Semiconductor | MOSFET | MOSFET Small Signal | 30 V | Through Hole | TO-92-3 | - 55 C | + 150 C | 1 Channel | 5.1 mm | 4.1 mm | 8.2 mm | 900 mW | Single | Si | N-Channel | 500 V | 500 mA | 18 Ohms | Enhancement | 11 ns | |||||||||||||||||||||||||||||||||||||||||||
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GET PRICE |
23,511
In-stock
|
Toshiba Semiconductor | MOSFET 3PL PLN,ACTIVE,DISCON(08-10)/PHASE-OUT(10-... | 30 V | Through Hole | TO-3PL-3 | - 55 C | + 150 C | Reel | 1 Channel | 20 mm | 5 mm | 26 mm | 250 W | Single | Si | N-Channel | 500 V | 50 A | 110 mOhms | Enhancement | 105 ns | 65 ns | 51 ns | 20 ns | MOSFET | |||||||||||||||||||||||||||||||||||||||
|
GET PRICE |
24,907
In-stock
|
onsemi | MOSFET N-Ch LL UltraFET PWM Optimized | 20 V | - 55 C | + 175 C | ISL9N310 | 1 Channel | 10.29 mm | 7.88 mm | Single | Si | N-Channel | Enhancement | 52 ns | 36 ns | 1 N-Channel | Tube | 50 | 2.387 g | 30 V | 62 A | 15 mOhms | 70 W | 39 ns | 11 ns | 4.83 mm | ||||||||||||||||||||||||||||||||||||||
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GET PRICE |
15,600
In-stock
|
Vishay Semiconductors | Schottky Diodes & Rectifiers 12 Amp 100 Volt Common Cathode | Schottky Rectifiers | 0.95 V | - 55 C | + 150 C | 12 A | 6.73 mm | 6.22 mm | 2.39 mm | Dual Common Cathode | 1000 uA | 330 A | Si | Schottky Diodes & Rectifiers | Schottky Diode | Schottky diodes and rectifiers | 2000 | 300 mg | - 55 C to + 150 C | 100 V | |||||||||||||||||||||||||||||||||||||||||||
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GET PRICE |
45,000
In-stock
|
Toshiba Semiconductor | MOSFET | 12 V | SMD/SMT | TSSOP-Advance-8 | - 55 C | + 150 C | 2 Channel | 3.65 mm | 3.5 mm | 0.75 mm | 1.1 W | Dual | Si | N-Channel | 20 V | 6 A | 17 mOhms | Enhancement | 5 ns | 10 ns | |||||||||||||||||||||||||||||||||||||||||||
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GET PRICE |
22,500
In-stock
|
onsemi | MOSFET N-Channel PowerTrench | 16 V | - 55 C | + 150 C | 2 Channel | 8.6 mm | 3.9 mm | 1.45 mm | Dual | Si | N-Channel | Enhancement | 13 ns | Reel | 2500 | 338 mg | 30 V | 14 A | 7 mOhms | 2.4 W | 28 ns, 51 ns | 11 ns, 14 ns | |||||||||||||||||||||||||||||||||||||||||
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GET PRICE |
50,000
In-stock
|
onsemi | MOSFET 75a 30V 0.0055 Ohm Logic Level N-Ch | 16 V | Through Hole | - 40 C | + 150 C | Tube | 1 Channel | 6.8 mm | 2.5 mm | 6.3 mm | 225 W | Single | Si | N-Channel | 30 V | 5.5 mOhms | Enhancement | 145 ns, 55 ns | 18 ns | 1 N-Channel | 30 ns, 40 ns | 22 ns, 14 ns | 0.084199 oz | 50 | N | 75 A | |||||||||||||||||||||||||||||||||||||
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GET PRICE |
35,000
In-stock
|
Vishay | MOSFET RECOMMENDED ALT 781-SUP85N10-10-E3 | SUP | Tube | Si | TrenchFET | MOSFET | 0.211644 oz | 50 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
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GET PRICE |
60,500
In-stock
|
Toshiba Semiconductor | MOSFET | SMD/SMT | UF6-6 | 2 mm | 1.7 mm | 0.7 mm | Si | MOSFETs | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
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GET PRICE |
40,000
In-stock
|
Toshiba Semiconductor | MOSFET | 4 V | SMD/SMT | + 150 C | 1 Channel | 1.6 mm | 0.8 mm | 0.7 mm | 100 mW | Single | Si | N-Channel | 20 V | 180 mA | 3 Ohms | 400 mV | Enhancement | 1 N-Channel | 300 ns | 115 ns | |||||||||||||||||||||||||||||||||||||||||||
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GET PRICE |
85,000
In-stock
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Toshiba | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type | SMD/SMT | 2 Channel | 2 mm | 1.25 mm | 0.9 mm | Dual | Si | N-Channel | 2 N-Channel | MOSFETs | MOSFET | |||||||||||||||||||||||||||||||||||||||||||||||||||
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GET PRICE |
8,623
In-stock
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Toshiba | Through Hole | + 150 C | 100 W | Single | Si | PNP | - 140 V | - 5 V | 2 V | 30 MHz | 35 | 10 A | BJTs - Bipolar Transistors | 4000 | 83 |