- Manufacture :
- Package / Case :
- Collector- Emitter Voltage VCEO Max :
- Gate-Emitter Leakage Current :
- Maximum Gate Emitter Voltage :
6 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
496
In-stock
|
Fairchild Semiconductor | IGBT Transistors 600V N-Channel IGBT SMPS Series | Through Hole | TO-247-3 | + 150 C | Tube | 290 W | Single | 600 V | 1.8 V | 70 A | +/- 250 nA | +/- 20 V | ||||
|
72
In-stock
|
Fairchild Semiconductor | IGBT Transistors N-CH / 40A 600V FS Planar | Through Hole | TO-247 | + 150 C | Tube | 290 W | Single | 600 V | 2.3 V | 80 A | 400 nA | 20 V | ||||
|
42
In-stock
|
IXYS | IGBT Transistors XPT 1200V 84A Single IGBT | Through Hole | ISOPLUS 247-3 | + 150 C | Tube | 290 W | Single | 1200 V | 1.8 V | 84 A | 500 nA | 20 V | ||||
|
51
In-stock
|
Fairchild Semiconductor | IGBT Transistors N-ch / 40A 650V IGBT | Through Hole | TO-247-3 | + 150 C | Tube | 290 W | Single | 650 V | 1.8 V | 80 A | +/- 400 nA | +/- 20 V | ||||
|
395
In-stock
|
Fairchild Semiconductor | IGBT Transistors 600V | Through Hole | TO-247-3 | + 150 C | Tube | 290 W | Single | 600 V | 1.8 V | 70 A | +/- 250 nA | +/- 20 V | ||||
|
VIEW | Fairchild Semiconductor | IGBT Transistors 600V N-Channel IGBT UFS Series | Through Hole | TO-247-3 | + 150 C | Tube | 290 W | Single | 600 V | 1.4 V | 70 A | +/- 100 nA | +/- 20 V |