- Manufacture :
- Package / Case :
- Configuration :
- Collector- Emitter Voltage VCEO Max :
- Collector-Emitter Saturation Voltage :
- Gate-Emitter Leakage Current :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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113
In-stock
|
onsemi | IGBT Transistors 1200V/40A IGBT SOLAR/UPS | Through Hole | TO-247 | + 150 C | Tube | 260 W | Single | 1200 V | 2 V | 80 A | 200 nA | 25 V | |||
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59
In-stock
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STMicroelectronics | IGBT Transistors N-Ch 600volt 50 Amp | Through Hole | ISOTOP-4 | + 150 C | Tube | 260 W | Single Dual Emitter | 600 V | 2.5 V | 50 A | 100 nA | 20 V | |||
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122
In-stock
|
onsemi | IGBT Transistors 1200V/40A FS1 IGBT IH | Through Hole | TO-247 | + 150 C | Tube | 260 W | Single | 1200 V | 1.9 V | 80 A | 200 nA | 20 V | |||
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80
In-stock
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onsemi | IGBT Transistors 1200V/30A FS1 IGBT IH | Through Hole | TO-247 | + 150 C | Tube | 260 W | Single | 1200 V | 1.75 V | 60 A | 200 nA | 20 V | |||
|
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117
In-stock
|
onsemi | IGBT Transistors 1200V/40A FS1 IGBT | Through Hole | TO-247 | + 150 C | Tube | 260 W | Single | 1200 V | 1.9 V | 80 A | 200 nA | 20 V |
