- Mounting Style :
- Package / Case :
- Collector- Emitter Voltage VCEO Max :
- Gate-Emitter Leakage Current :
- Maximum Gate Emitter Voltage :
6 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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2,214
In-stock
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Infineon Technologies | IGBT Transistors 430V LOW-VCEON DISCRETE IGBT | SMD/SMT | D-PAK-3 | + 150 C | Tube | 125 W | Single | 430 V | 1.4 V | 20 A | 10 V | |||||
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40,000
In-stock
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Infineon Technologies | IGBT Transistors 430V LO-VCEON DISCRETE IGBT | Through Hole | TO-220-3 | + 150 C | Tube | 125 W | Single | 430 V | 1.4 V | 20 A | 10 V | |||||
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88
In-stock
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STMicroelectronics | IGBT Transistors 20 A - 600 V - short circuit rugged IGBT | Through Hole | TO-220-3 | + 150 C | Tube | 125 W | Single | 600 V | +/- 20 V | |||||||
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19
In-stock
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IXYS | IGBT Transistors 35 Amps 600V | Through Hole | ISOPLUS247-3 | + 150 C | Tube | 125 W | Single | 600 V | 2.2 V | 38 A | 500 nA | +/- 20 V | ||||
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85
In-stock
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IR / Infineon | IGBT Transistors 1200V IGBT GEN8 | Through Hole | TO-247AC-3 | + 150 C | Tube | 125 W | Single | 1200 V | 1.7 V | 30 A | 100 nA | 30 V | ||||
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105
In-stock
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IR / Infineon | IGBT Transistors 1200V IGBT GEN8 | Through Hole | TO-247AD-3 | + 150 C | Tube | 125 W | Single | 1200 V | 1.7 V | 30 A | 100 nA | 30 V |