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Collector- Emitter Voltage VCEO Max :
Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Maximum Gate Emitter Voltage :
6 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
IXYN82N120C3H1
1+
$36.670
5+
$36.290
10+
$33.820
25+
$32.310
RFQ
35
In-stock
IXYS IGBT Transistors XPT IGBT C3-Class 1200V/105A; Copack SMD/SMT SOT-227B-4 + 150 C Tube 500 W Single 1200 V 2.75 V 105 A 100 nA 30 V
IXBT42N300HV
1+
$40.460
5+
$39.560
10+
$37.750
25+
$36.160
RFQ
29
In-stock
IXYS IGBT Transistors SMD/SMT TO-268HV-2 + 150 C   500 W Single 3 kV 2.5 V 104 A +/- 200 nA +/- 25 V
APT40GR120B2D30
1+
$11.500
10+
$10.350
25+
$9.430
50+
$8.780
RFQ
54
In-stock
Microsemi IGBT Transistors Insulated Gate Bipolar Transistor - Power MOS 8 Through Hole TO-247-3 + 150 C   500 W Single 1.2 kV 2.5 V 88 A 250 nA 30 V
IXYH40N90C3D1
1+
$7.570
10+
$6.840
25+
$6.520
100+
$5.670
RFQ
67
In-stock
IXYS IGBT Transistors XPT 900V IGBT GenX3 XPT IGBT Through Hole TO-247AD-3 + 150 C Tube 500 W Single 900 V 2.2 V 90 A 100 nA +/- 20 V
APT64GA90LD30
1+
$12.450
10+
$11.320
25+
$10.470
50+
$9.900
RFQ
48
In-stock
Microsemi IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS... Through Hole TO-264-3 + 150 C Tube 500 W Single 900 V 2.5 V 117 A 100 nA 30 V
IXYH30N120C3
1+
$8.020
10+
$7.250
25+
$6.910
100+
$6.000
RFQ
30
In-stock
IXYS IGBT Transistors 1200V XPT GenX3 IGBT Through Hole TO-247-3 + 150 C Tube 500 W Single 1200 V 3.7 V 75 A 100 nA 30 V
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