- Manufacture :
- Collector- Emitter Voltage VCEO Max :
- Maximum Gate Emitter Voltage :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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VIEW | Infineon Technologies | IGBT Transistors 600V ULTRAFAST 8-60KHZ DSCRETE IGBT | Through Hole | TO-274AA-3 | + 150 C | Tube | 350 W | Single | 600 V | 2 V | 85 A | +/- 20 V | ||||
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23
In-stock
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IR / Infineon | IGBT Transistors IGBT DISCRETES | Through Hole | TO-274AA-3 | + 150 C | Tube | 462 W | Single | 1.2 kV | 2 V | 116 A | +/- 200 nA | +/- 30 V |
