- Collector- Emitter Voltage VCEO Max :
- Gate-Emitter Leakage Current :
- Maximum Gate Emitter Voltage :
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9 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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2,474
In-stock
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STMicroelectronics | IGBT Transistors N-Ch 600 Volt 14 Amp | SMD/SMT | TO-252-3 | + 150 C | Reel | 70 W | Single | 600 V | 2.5 V | 25 A | +/- 100 nA | +/- 20 V | ||||
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10,000
In-stock
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STMicroelectronics | IGBT Transistors N-channel MOSFET | SMD/SMT | TO-252-3 | + 150 C | Reel | Single | 600 V | +/- 20 V | ||||||||
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1,661
In-stock
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Fairchild Semiconductor | IGBT Transistors 600V, 3A Short Circuit Rated IGBT | SMD/SMT | TO-252-3 | + 150 C | Reel | 60 W | Single | 600 V | 2.4 V | 6 A | 10 uA | 20 V | ||||
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1,501
In-stock
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Infineon Technologies | IGBT Transistors HIGH SPEED 2 TECH 1200A 1A | SMD/SMT | TO-252-3 | + 150 C | Reel | Single | 1200 V | +/- 20 V | ||||||||
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1,010
In-stock
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STMicroelectronics | IGBT Transistors N-Ch 600 Volt 7 Amp | SMD/SMT | TO-252-3 | + 150 C | Reel | 55 W | Single | 600 V | 1.6 V | 15 A | +/- 100 nA | +/- 20 V | ||||
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2,498
In-stock
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STMicroelectronics | IGBT Transistors N-Ch 1200 Volt 5 Amp | SMD/SMT | TO-252-3 | + 150 C | Reel | 55 W | Single | 1200 V | 2 V | 10 A | +/- 100 nA | +/- 20 V | ||||
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VIEW | Infineon Technologies | IGBT Transistors FAST IGBT NPT TECH 1200V 2A | SMD/SMT | TO-252-3 | + 150 C | Reel | Single | 1200 V | +/- 20 V | ||||||||
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VIEW | Infineon Technologies | IGBT Transistors FAST IGBT NPT TECH 600V 2A | SMD/SMT | TO-252-3 | + 150 C | Reel | Single | 600 V | +/- 20 V | ||||||||
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1,822
In-stock
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STMicroelectronics | IGBT Transistors N-Ch 600 Volt 3 Amp | SMD/SMT | TO-252-3 | + 150 C | Reel | 48 W | Single | 600 V | 1.5 V | 6 A | +/- 100 nA | +/- 20 V |