- Package / Case :
- Collector- Emitter Voltage VCEO Max :
- Collector-Emitter Saturation Voltage :
- Gate-Emitter Leakage Current :
12 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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101
In-stock
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IR / Infineon | IGBT Transistors 1200V UltraFast 4-20kHz Copack IGBT | Through Hole | TO-247-3 | + 150 C | Tube | 520 W | Single | 1200 V | 2.4 V | 120 A | 200 nA | +/- 30 V | ||||
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51
In-stock
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Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS... | Through Hole | TO-247-3 | + 150 C | Bulk | 416 W | Single | 600 V | 2 V | 96 A | +/- 100 nA | +/- 30 V | ||||
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93
In-stock
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Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS... | Through Hole | TO-247-3 | + 150 C | 337 W | Single | 600 V | 78 A | +/- 100 nA | +/- 30 V | ||||||
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63
In-stock
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Infineon Technologies | IGBT Transistors 1200V Trench IGBT Inductn Cooking 50A | Through Hole | TO-247-3 | + 150 C | Tube | 180 W | Single | 1.2 kV | 1.9 V | 50 A | 100 nA | +/- 30 V | ||||
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59
In-stock
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Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - Power MOS 8 | Through Hole | TO-247-3 | + 150 C | 892 W | Single | 650 V | 208 A | +/- 250 nA | +/- 30 V | ||||||
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192
In-stock
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IR / Infineon | IGBT Transistors IGBT DISCRETES | Through Hole | TO-220-3 | + 150 C | Tube | 160 W | Single | 330 V | 1.69 V | 70 A | +/- 100 nA | +/- 30 V | ||||
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VIEW | Fairchild Semiconductor | IGBT Transistors 330V 90A PDP Trench | Through Hole | TO-3PN-3 | + 150 C | Tube | Single | 330 V | +/- 30 V | ||||||||
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34
In-stock
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IR / Infineon | IGBT Transistors 1200V UltraFast Discrete IGBT | Through Hole | TO-247AC-3 | + 150 C | Tube | 400 W | Single | 1200 V | 2.4 V | 90 A | 100 nA | +/- 30 V | ||||
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75
In-stock
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IR / Infineon | IGBT Transistors 1200V UltraFast 4-20kHz Copack IGBT | Through Hole | TO-247AC-3 | + 150 C | Tube | 216 W | Single | 1200 V | 2.4 V | 45 A | 100 nA | +/- 30 V | ||||
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23
In-stock
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IR / Infineon | IGBT Transistors IGBT DISCRETES | Through Hole | TO-274AA-3 | + 150 C | Tube | 462 W | Single | 1.2 kV | 2 V | 116 A | +/- 200 nA | +/- 30 V | ||||
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32
In-stock
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IR / Infineon | IGBT Transistors 1200V UltraFast 4-20kHz Copack IGBT | Through Hole | TO-247AC-3 | + 150 C | Tube | 320 W | Single | 1200 V | 2.4 V | 70 A | 100 nA | +/- 30 V | ||||
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25
In-stock
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Fairchild Semiconductor | IGBT Transistors 330V 180A PDP Trench | Through Hole | TO-3PN-3 | + 150 C | Tube | Single | 330 V | +/- 30 V |