- Manufacture :
- Mounting Style :
- Pd - Power Dissipation :
-
- 1.042 kW (1)
- 1040 W (2)
- 105 W (1)
- 125 W (2)
- 167 W (2)
- 180 W (2)
- 223 W (3)
- 230 W (1)
- 250 W (3)
- 257 W (1)
- 272 W (1)
- 297 W (1)
- 305 W (1)
- 337 W (1)
- 345 W (1)
- 347 W (2)
- 350 W (2)
- 379 W (3)
- 415 W (2)
- 416 W (1)
- 417 W (1)
- 420 W (2)
- 446 W (1)
- 480 W (1)
- 500 W (4)
- 543 W (2)
- 625 W (6)
- 750 W (1)
- 833 W (1)
- 89 W (2)
- Collector- Emitter Voltage VCEO Max :
- Collector-Emitter Saturation Voltage :
- Continuous Collector Current at 25 C :
-
- 100 A (6)
- 105 A (2)
- 110 A (1)
- 113 A (1)
- 117 A (1)
- 118 A (1)
- 124 A (1)
- 134 A (1)
- 143 A (2)
- 15 A (2)
- 160 A (1)
- 164 A (1)
- 200 A (1)
- 21 A (1)
- 215 A (1)
- 30 A (2)
- 36 A (2)
- 40 A (2)
- 48 A (1)
- 52 A (1)
- 54 A (2)
- 60 A (4)
- 64 A (2)
- 66 A (1)
- 67 A (1)
- 69 A (1)
- 75 A (1)
- 78 A (1)
- 80 A (4)
- 88 A (1)
- 90 A (1)
- 93 A (2)
- 94 A (2)
- Gate-Emitter Leakage Current :
54 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
204
In-stock
|
IXYS | IGBT Transistors XPT IGBT C3-Class 1200V/160A; Copack | Through Hole | TO-264-3 | + 150 C | Tube | 1040 W | Single | 1200 V | 2.75 V | 164 A | 100 nA | 30 V | ||||
|
456
In-stock
|
Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - NPT Low Frequ... | Through Hole | TO-247-3 | + 150 C | 415 W | Single | 600 V | 2.8 V | 93 A | 100 nA | 30 V | |||||
|
35
In-stock
|
IXYS | IGBT Transistors XPT IGBT C3-Class 1200V/105A; Copack | SMD/SMT | SOT-227B-4 | + 150 C | Tube | 500 W | Single | 1200 V | 2.75 V | 105 A | 100 nA | 30 V | ||||
|
105
In-stock
|
Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low F... | Through Hole | TO-264-3 | + 150 C | 833 W | Single | 1.2 kV | 1.7 V | 200 A | 600 nA | 30 V | |||||
|
180
In-stock
|
IXYS | IGBT Transistors XPT 1200V IGBT GenX6 XPT IGBT | Through Hole | TO-247-3 | + 150 C | Tube | 625 W | Single | 1200 V | 4.2 V | 90 A | 100 nA | 30 V | ||||
|
98
In-stock
|
Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low F... | Through Hole | TO-264-3 | + 150 C | 543 W | Single | 1.2 kV | 1.7 V | 134 A | 600 nA | 30 V | |||||
|
50
In-stock
|
Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low F... | SMD/SMT | SOT-227-4 | + 150 C | Bulk | 379 W | Single | 1.2 kV | 1.7 V | 124 A | 600 nA | 30 V | ||||
|
246
In-stock
|
Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - NPT Med Frequ... | Through Hole | TO-247-3 | + 150 C | 250 W | Single | 1.2 kV | 3.2 V | 36 A | 480 nA | 30 V | |||||
|
30
In-stock
|
IXYS | IGBT Transistors XPT 1200V IGBT GenX3 XPT IGBT | Through Hole | TO-247-3 | + 150 C | Tube | 230 W | Single | 1200 V | 4 V | 36 A | 100 nA | 30 V | ||||
|
72
In-stock
|
Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS... | Through Hole | TO-247-3 | + 150 C | 417 W | Single | 1.2 kV | 3.3 V | 69 A | 100 nA | 30 V | |||||
|
97
In-stock
|
Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - NPT Med Frequ... | Through Hole | TO-247-3 | + 150 C | Tube | 250 W | Single | 600 V | 2 V | 64 A | 100 nA | 30 V | ||||
|
55
In-stock
|
Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low F... | Through Hole | TO-264-3 | + 150 C | 379 W | Single | 1.2 kV | 1.7 V | 94 A | 600 nA | 30 V | |||||
|
1,862
In-stock
|
Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - NPT Med Frequ... | Through Hole | TO-247-3 | + 150 C | 347 W | Single | 1.2 kV | 3.2 V | 54 A | 120 nA | 30 V | |||||
|
125
In-stock
|
Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - NPT Med Frequ... | Through Hole | TO-247-3 | + 150 C | Tube | 347 W | Single | 1.2 kV | 3.2 V | 54 A | 120 nA | 30 V | ||||
|
22
In-stock
|
Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS... | Through Hole | TO-247-3 | + 150 C | Tube | 625 W | Single | 1.2 kV | 3.3 V | 100 A | 100 nA | 30 V | ||||
|
28
In-stock
|
IXYS | IGBT Transistors 650V/240A TRENCH IGBT GENX4 XPT | SMD/SMT | SOT-227 | + 150 C | Tube | 750 W | Single | 650 V | 2.1 V | 215 A | 100 nA | 30 V | ||||
|
35
In-stock
|
Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - NPT Low Frequ... | Through Hole | TO-247-3 | + 150 C | Tube | 297 W | Single | 1.2 kV | 2.5 V | 52 A | 100 nA | 30 V | ||||
|
144
In-stock
|
Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - NPT High Freq... | Through Hole | TO-247-3 | + 150 C | 415 W | Single | 600 V | 2.8 V | 93 A | 100 nA | 30 V | |||||
|
28
In-stock
|
IXYS | IGBT Transistors XPT IGBT C3-Class 1200V/105A | Through Hole | TO-247-3 | + 150 C | Tube | 625 W | Single | 1200 V | 2.5 V | 105 A | 100 nA | 30 V | ||||
|
63
In-stock
|
IXYS | IGBT Transistors XPT 1200V IGBT GenX5 XPT IGBT | Through Hole | TO-247-3 | + 150 C | Tube | 480 W | Single | 1200 V | 4.8 V | 64 A | 100 nA | 30 V | ||||
|
146
In-stock
|
Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - NPT Med Frequ... | Through Hole | TO-247-3 | + 150 C | Tube | 446 W | Single | 600 V | 2 V | 110 A | 120 nA | 30 V | ||||
|
40
In-stock
|
Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low F... | SMD/SMT | D3PAK-3 | + 150 C | 272 W | Single | 1.2 kV | 1.7 V | 67 A | 600 nA | 30 V | |||||
|
24
In-stock
|
Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS... | Through Hole | T-MAX-3 | + 150 C | Tube | 625 W | Single | 1.2 kV | 3.3 V | 113 A | 100 nA | 30 V | ||||
|
22
In-stock
|
Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS... | SMD/SMT | TO-264-3 | + 150 C | Tube | 625 W | Single | 600 V | 2 V | 143 A | 100 nA | 30 V | ||||
|
52
In-stock
|
IXYS | IGBT Transistors XPT IGBT C3-Class 1200V/160A | Through Hole | TO-247-3 | + 150 C | Tube | 1040 W | Single | 1200 V | 2.75 V | 160 A | 100 nA | 30 V | ||||
|
54
In-stock
|
Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - Power MOS 8 | Through Hole | TO-247-3 | + 150 C | 500 W | Single | 1.2 kV | 2.5 V | 88 A | 250 nA | 30 V | |||||
|
50
In-stock
|
Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - NPT Med Frequ... | Through Hole | TO-247-3 | + 150 C | 345 W | Single | 600 V | 2 V | 80 A | 100 nA | 30 V | |||||
|
98
In-stock
|
Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - Power MOS 8 | Through Hole | TO-247-3 | + 150 C | 543 W | Single | 650 V | 1.9 V | 118 A | 250 nA | 30 V | |||||
|
28
In-stock
|
IXYS | IGBT Transistors XPT 1200V IGBT GenX7 XPT IGBT | Through Hole | TO-247-3 | + 150 C | Tube | 105 W | Single | 1200 V | 4 V | 21 A | 100 nA | 30 V | ||||
|
39
In-stock
|
IXYS | IGBT Transistors XPT 1200V IGBT GenX4 XPT IGBT | Through Hole | TO-247-3 | + 150 C | Tube | 416 W | Single | 1200 V | 3.7 V | 66 A | 100 nA | 30 V |