- Manufacture :
- Mounting Style :
- Package / Case :
- Collector- Emitter Voltage VCEO Max :
- Maximum Gate Emitter Voltage :
14 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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428
In-stock
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Infineon Technologies | IGBT Transistors LOW LOSS IGBT TECH 1200V 60A | Through Hole | TO-247-3 | + 150 C | Tube | 375 W | Single | 1200 V | 2.3 V | 100 A | 600 nA | 5.8 V | ||||
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105
In-stock
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Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low F... | Through Hole | TO-264-3 | + 150 C | 833 W | Single | 1.2 kV | 1.7 V | 200 A | 600 nA | 30 V | |||||
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230
In-stock
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Infineon Technologies | IGBT Transistors LOW LOSS DuoPack 1200V 25A | Through Hole | TO-247-3 | + 150 C | Tube | 190 W | Single | 1200 V | 2.2 V | 50 A | 600 nA | 20 V | ||||
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98
In-stock
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Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low F... | Through Hole | TO-264-3 | + 150 C | 543 W | Single | 1.2 kV | 1.7 V | 134 A | 600 nA | 30 V | |||||
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50
In-stock
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Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low F... | SMD/SMT | SOT-227-4 | + 150 C | Bulk | 379 W | Single | 1.2 kV | 1.7 V | 124 A | 600 nA | 30 V | ||||
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217
In-stock
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Infineon Technologies | IGBT Transistors LOW LOSS IGBT TECH 1200V 60A | Through Hole | TO-247-3 | + 150 C | Tube | 375 W | Single | 1200 V | 2.3 V | 100 A | 600 nA | 5.8 V | ||||
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240
In-stock
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Infineon Technologies | IGBT Transistors LOW LOSS DuoPack 1200V 40A | Through Hole | TO-247-3 | + 150 C | Tube | 270 W | Single | 1200 V | 2.3 V | 75 A | 600 nA | 20 V | ||||
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240
In-stock
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Infineon Technologies | IGBT Transistors LOW LOSS DuoPack 1200V 40A | Through Hole | TO-247-3 | + 150 C | Tube | 270 W | Single | 1200 V | 2.3 V | 75 A | 600 nA | 20 V | ||||
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13,500
In-stock
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Infineon Technologies | IGBT Transistors LOW LOSS DuoPack 1200V 40A | Through Hole | TO-247-3 | + 150 C | Tube | 270 W | Single | 1200 V | 2.3 V | 75 A | 600 nA | 20 V | ||||
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74
In-stock
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Infineon Technologies | IGBT Transistors LOW LOSS DuoPack 1200V 25A | Through Hole | TO-247-3 | + 150 C | Tube | 190 W | Single | 1200 V | 2.2 V | 50 A | 600 nA | 20 V | ||||
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55
In-stock
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Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low F... | Through Hole | TO-264-3 | + 150 C | 379 W | Single | 1.2 kV | 1.7 V | 94 A | 600 nA | 30 V | |||||
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275
In-stock
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Infineon Technologies | IGBT Transistors IGBT PRODUCTS | Through Hole | TO-247-3 | + 150 C | Tube | 217 W | 1200 V | 2.7 V | 30 A | 600 nA | +/- 20 V | |||||
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40
In-stock
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Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low F... | SMD/SMT | D3PAK-3 | + 150 C | 272 W | Single | 1.2 kV | 1.7 V | 67 A | 600 nA | 30 V | |||||
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15
In-stock
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Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low F... | Through Hole | TO-247-3 | + 150 C | Tube | 379 W | Single | 1.2 kV | 1.7 V | 94 A | 600 nA | 30 V |