IGBT Transistors - Kaimeite

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4 products

IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
	IXBK55N300	1+ $66.560 5+ $65.340 10+ $63.650 25+ $62.400		PDF RFQ	166 In-stock	IXYS	IGBT Transistors	Through Hole	TO-264-3	+ 150 C	Tube	625 W	Single	3 kV	2.7 V	130 A	+/- 200 nA	+/- 25 V
	IXBT42N300HV	1+ $40.460 5+ $39.560 10+ $37.750 25+ $36.160		PDF RFQ	29 In-stock	IXYS	IGBT Transistors	SMD/SMT	TO-268HV-2	+ 150 C		500 W	Single	3 kV	2.5 V	104 A	+/- 200 nA	+/- 25 V
	IXBF55N300	1+ $76.160 5+ $74.770 10+ $72.830 25+ $71.400		PDF RFQ	16 In-stock	IXYS	IGBT Transistors High Voltage High Gain BIMOSFET	Through Hole	ISOPLUS i4-Pak-3	+ 150 C		357 W	Single	3 kV	2.7 V	86 A	+/- 200 nA	+/- 25 V
	IRG7PSH50UDPBF	1+ $12.120 10+ $11.150 25+ $10.680 50+ $10.110		PDF RFQ	23 In-stock	IR / Infineon	IGBT Transistors IGBT DISCRETES	Through Hole	TO-274AA-3	+ 150 C	Tube	462 W	Single	1.2 kV	2 V	116 A	+/- 200 nA	+/- 30 V

IXBK55N300

IXBK55N300

IXYS

IGBT Transistors

Stock : 166

1+: $66.560

5+: $65.340

10+: $63.650

25+: $62.400

IXBT42N300HV

IXBT42N300HV

IXYS

IGBT Transistors

Stock : 29

1+: $40.460

5+: $39.560

10+: $37.750

25+: $36.160

IXBF55N300

IXBF55N300

IXYS

IGBT Transistors High Voltage High Gain BIMOSFET

Stock : 16

1+: $76.160

5+: $74.770

10+: $72.830

25+: $71.400

IRG7PSH50UDPBF

IRG7PSH50UDPBF

IR / Infineon

IGBT Transistors IGBT DISCRETES

Stock : 23

1+: $12.120

10+: $11.150

25+: $10.680

50+: $10.110

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