- Manufacture :
- Mounting Style :
- Package / Case :
- Pd - Power Dissipation :
- Configuration :
- Collector- Emitter Voltage VCEO Max :
- Maximum Gate Emitter Voltage :
5 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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407
In-stock
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Fairchild Semiconductor | IGBT Transistors 600V 4 0A UFD | Through Hole | TO-3P-3 | + 150 C | Tube | 156 W | Single | 1000 V | 2.5 V | +/- 500 nA | +/- 25 V | |||||
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12
In-stock
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Vishay Semiconductors | IGBT Transistors Ic 300A Vce(On)1.30V Half Brdge Trench PT | Chassis | DIAP | + 150 C | 1.136 kW | Dual | 600 V | - | 580 A | +/- 500 nA | 20 V | |||||
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4
In-stock
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Vishay Semiconductors | IGBT Transistors Ic 100A Vce(On)1.16V Half Brdge Trench PT | Chassis | INT-A-PAK | + 150 C | 781 W | Dual | 600 V | - | 337 A | +/- 500 nA | 20 V | |||||
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GET PRICE |
4,000
In-stock
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Fairchild Semiconductor | IGBT Transistors HIGH POWER | Through Hole | TO-264-3 | + 150 C | Tube | 180 W | Single | 1000 V | 1.5 V | 60 A | +/- 500 nA | +/- 25 V | |||
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5,650
In-stock
|
Fairchild Semiconductor | IGBT Transistors HIGH POWER | Through Hole | TO-264-3 | + 150 C | Tube | 180 W | Single | 1000 V | 1.5 V | 60 A | +/- 500 nA | +/- 25 V |