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Pd - Power Dissipation :
Configuration :
Collector- Emitter Voltage VCEO Max :
Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Maximum Gate Emitter Voltage :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
FGA50N100BNTDTU
1+
$4.630
10+
$3.940
100+
$3.410
250+
$3.240
RFQ
407
In-stock
Fairchild Semiconductor IGBT Transistors 600V 4 0A UFD Through Hole TO-3P-3 + 150 C Tube 156 W Single 1000 V 2.5 V   +/- 500 nA +/- 25 V
VS-GP300TD60S
1+
$149.800
2+
$146.850
5+
$141.950
10+
$139.410
RFQ
12
In-stock
Vishay Semiconductors IGBT Transistors Ic 300A Vce(On)1.30V Half Brdge Trench PT Chassis DIAP + 150 C   1.136 kW Dual 600 V - 580 A +/- 500 nA 20 V
VS-GP100TS60SFPBF
1+
$81.390
2+
$79.780
5+
$78.910
10+
$76.440
RFQ
4
In-stock
Vishay Semiconductors IGBT Transistors Ic 100A Vce(On)1.16V Half Brdge Trench PT Chassis INT-A-PAK + 150 C   781 W Dual 600 V - 337 A +/- 500 nA 20 V
FGL60N100BNTDTU
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RFQ
4,000
In-stock
Fairchild Semiconductor IGBT Transistors HIGH POWER Through Hole TO-264-3 + 150 C Tube 180 W Single 1000 V 1.5 V 60 A +/- 500 nA +/- 25 V
FGL60N100BNTD
1+
$6.000
10+
$5.000
100+
$4.000
250+
$4.000
RFQ
5,650
In-stock
Fairchild Semiconductor IGBT Transistors HIGH POWER Through Hole TO-264-3 + 150 C Tube 180 W Single 1000 V 1.5 V 60 A +/- 500 nA +/- 25 V
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