IGBT Transistors - Kaimeite

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3 products

PART NO.	PRICE		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
APT40GR120B2D30	1+ $11.500 10+ $10.350 25+ $9.430 50+ $8.780	PDF RFQ	54 In-stock	Microsemi	IGBT Transistors Insulated Gate Bipolar Transistor - Power MOS 8	Through Hole	TO-247-3	+ 150 C		500 W	Single	1.2 kV	2.5 V	88 A	250 nA	30 V
APT45GR65B	1+ $6.290 10+ $5.060 25+ $4.970 100+ $4.610	PDF RFQ	98 In-stock	Microsemi	IGBT Transistors Insulated Gate Bipolar Transistor - Power MOS 8	Through Hole	TO-247-3	+ 150 C		543 W	Single	650 V	1.9 V	118 A	250 nA	30 V
STGW50H60DF	1+ $4.680 10+ $3.980 25+ $3.910 100+ $3.450	PDF RFQ	11 In-stock	STMicroelectronics	IGBT Transistors 50A 600V FST IGBT Ultrafast Diode	Through Hole	TO-247	+ 150 C	Tube	360 W			1.8 V	100 A	250 nA	+/- 20 V