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Pd - Power Dissipation :
Collector- Emitter Voltage VCEO Max :
Collector-Emitter Saturation Voltage :
Maximum Gate Emitter Voltage :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
IRG4PSC71KDPBF
1+
$16.220
10+
$14.910
25+
$14.290
50+
$13.520
RFQ
19
In-stock
Infineon Technologies IGBT Transistors 600V UltraFast 8-25kHz Through Hole TO-274-3 + 150 C Tube 350 W Single 600 V 1.83 V 85 A 100 nA +/- 20 V
IRG4PSC71UPBF
7000+
$4.710
VIEW
RFQ
Infineon Technologies IGBT Transistors 600V ULTRAFAST 8-60KHZ DSCRETE IGBT Through Hole TO-274AA-3 + 150 C Tube 350 W Single 600 V 2 V 85 A   +/- 20 V
IRG7PH42UD1MPBF
1+
$7.740
10+
$7.000
25+
$6.670
100+
$5.790
RFQ
67
In-stock
IR / Infineon IGBT Transistors 1200V UltraFast Copack IGBT Through Hole TO-247AD-3 + 150 C Tube 313 W Single 1200 V 1.7 V 85 A 100 nA 20 V
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