- Manufacture :
- Package / Case :
- Collector- Emitter Voltage VCEO Max :
- Gate-Emitter Leakage Current :
- Maximum Gate Emitter Voltage :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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430
In-stock
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Fairchild Semiconductor | IGBT Transistors N-Ch 60A 600V FS IGBT | Through Hole | TO-247-3 | + 150 C | Tube | 378 W | Single | 600 V | 2.2 V | 120 A | +/- 400 nA | +/- 20 V | |||
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288
In-stock
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Fairchild Semiconductor | IGBT Transistors 600V 60A FIELD STOP | Through Hole | + 150 C | Tube | Single | 600 V | 120 A | +/- 20 V | |||||||
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255
In-stock
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Fairchild Semiconductor | IGBT Transistors N-Ch/ 60A 600V FS IGBT | Through Hole | TO-247-3 | + 150 C | Tube | 298 W | Single | 600 V | 1.8 V | 120 A | +/- 400 nA | +/- 20 V | |||
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101
In-stock
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IR / Infineon | IGBT Transistors 1200V UltraFast 4-20kHz Copack IGBT | Through Hole | TO-247-3 | + 150 C | Tube | 520 W | Single | 1200 V | 2.4 V | 120 A | 200 nA | +/- 30 V | |||
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32
In-stock
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IXYS | IGBT Transistors 75 Amps 600V 1.05 V Rds | Through Hole | TO-247-3 | + 150 C | Tube | 300 W | Single | 600 V | 1.18 V | 120 A | 100 nA | +/- 20 V | |||
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206
In-stock
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onsemi | IGBT Transistors 600V/60A IGBT LPT TO-247 | Through Hole | TO-247-3 | + 150 C | Tube | 298 W | Single | 600 V | 2.6 V | 120 A | 200 nA | 20 V | |||
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44,000
In-stock
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Fairchild Semiconductor | IGBT Transistors 600V/60A Field Stop IGBT ver. 2 | Through Hole | TO-247 | + 150 C | Tube | 600 W | 600 V | 1.9 V | 120 A | 400 nA | 20 V |
