- Manufacture :
- Mounting Style :
- Package / Case :
- Collector- Emitter Voltage VCEO Max :
- Collector-Emitter Saturation Voltage :
- Gate-Emitter Leakage Current :
7 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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834
In-stock
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Infineon Technologies | IGBT Transistors 600V Warp 60-150kHz | Through Hole | TO-220FP-3 | + 150 C | Tube | 34 W | Single | 600 V | 2.16 V | 12 A | 100 nA | +/- 20 V | ||||
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208
In-stock
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IXYS | IGBT Transistors 12 Amps 1700V 3.6 Rds | SMD/SMT | TO-268-3 | + 150 C | Tube | 75 W | Single | 1.7 kV | 2.84 V | 12 A | 100 nA | +/- 20 V | ||||
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482
In-stock
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Infineon Technologies | IGBT Transistors 600V LO-VCEON NON PNCH THRU COPCK ... | SMD/SMT | TO-263-3 | + 150 C | Tube | 63 W | Single | 600 V | 2.5 V | 12 A | +/- 20 V | |||||
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20
In-stock
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IXYS | IGBT Transistors 12 Amps 1700 V 4 V Rds | Through Hole | TO-247-3 | + 150 C | Tube | 75 W | Single | 1.7 kV | 3 V | 12 A | 100 nA | +/- 20 V | ||||
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VIEW | Infineon Technologies | IGBT Transistors 600V LO VCEON IGBT HALF BRIDGE 2 CH | SMD/SMT | DPAK-3 | + 150 C | Reel | 77 W | Single | 600 V | 2 V | 12 A | +/- 100 nA | +/- 20 V | ||||
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VIEW | IR / Infineon | IGBT Transistors 600V LO VCEON IGBT HALF BRIDGE 2 CH | SMD/SMT | DPAK-3 | + 150 C | Reel | 77 W | Single | 600 V | 2 V | 12 A | +/- 100 nA | +/- 20 V | ||||
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VIEW | IR / Infineon | IGBT Transistors 600V LO VCEON IGBT HALF BRIDGE 2 CH | SMD/SMT | DPAK-3 | + 150 C | Reel | 77 W | Single | 600 V | 2 V | 12 A | +/- 100 nA | +/- 20 V |