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Pd - Power Dissipation :
Collector- Emitter Voltage VCEO Max :
Collector-Emitter Saturation Voltage :
Gate-Emitter Leakage Current :
Maximum Gate Emitter Voltage :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
IXGP24N120C3
1+
$5.500
10+
$4.670
100+
$4.050
250+
$3.840
RFQ
84
In-stock
IXYS IGBT Transistors 24 Amps 1200V Through Hole TO-220-3 + 150 C Tube 250 W Single 1.2 kV 3.6 V 48 A 100 nA +/- 20 V
IXGR24N120C3D1
1+
$9.470
10+
$8.560
25+
$8.160
100+
$7.090
RFQ
22
In-stock
IXYS IGBT Transistors 48 Amps 1200V 2.75 Rds Through Hole ISOPLUS 247-3 + 150 C Tube 200 W Single 1.2 kV 3.6 V 48 A 100 nA +/- 20 V
IXGH24N120C3
1+
$5.950
10+
$5.380
25+
$5.130
100+
$4.450
RFQ
35
In-stock
IXYS IGBT Transistors 48 Amps 1200V Through Hole TO-247 + 150 C Tube 250 W Single 1200 V 3.6 V 48 A 100 nA 20 V
Default Photo
1+
$7.550
10+
$6.790
25+
$6.190
100+
$5.580
RFQ
31
In-stock
Microsemi IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS... Through Hole TO-247-3 + 150 C   223 W Single 900 V 2.5 V 48 A 100 nA 30 V
SGH30N60RUFDTU
1+
$6.570
10+
$5.590
100+
$4.850
250+
$4.600
VIEW
RFQ
Fairchild Semiconductor IGBT Transistors Dis Short Circuit Rated IGBT Through Hole TO-3P-3 + 150 C Tube 235 W Single 600 V 2.2 V 48 A +/- 100 nA +/- 20 V
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