- Mounting Style :
- Package / Case :
- Gate-Emitter Leakage Current :
- Maximum Gate Emitter Voltage :
5 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
734
In-stock
|
Fairchild Semiconductor | IGBT Transistors 600V 7A NPT IGBT | SMD/SMT | TO-263AB (D2 PAK) | + 150 C | Reel | 83 W | Single | 600 V | 2.1 V | 14 A | +/- 10 uA | +/- 20 V | ||||
|
288
In-stock
|
Infineon Technologies | IGBT Transistors 600V DC-1 KHZ (STD) COPACK IGBT | SMD/SMT | DPAK-3 | + 150 C | Tube | 38 W | Single | 600 V | 1.7 V | 14 A | +/- 20 V | |||||
|
266
In-stock
|
Infineon Technologies | IGBT Transistors 600V UltraFast 10-30kHz | Through Hole | TO-262-3 | + 150 C | Tube | 49 W | Single | 600 V | 2.02 V | 14 A | 100 nA | +/- 20 V | ||||
|
2,474
In-stock
|
Fairchild Semiconductor | IGBT Transistors 14a 600V N-Ch IGBT UFS Series | SMD/SMT | TO-252AA-3 | + 150 C | Reel | 60 W | Single | 600 V | 1.6 V | 14 A | +/- 250 nA | +/- 20 V | ||||
|
2,965
In-stock
|
STMicroelectronics | IGBT Transistors 7A 1200 V Very Fast IGBT Power Bipolar | Through Hole | TO-220-3 | + 150 C | Tube | 75 W | Single | 2.2 V | 14 A | 100 nA | 20 V |