- Manufacture :
- Package / Case :
- Gate-Emitter Leakage Current :
- Maximum Gate Emitter Voltage :
4 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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876
In-stock
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STMicroelectronics | IGBT Transistors 35A Ultrafast IGBT 600V 100kHz | Through Hole | TO-220 | + 150 C | Tube | 200 W | Single | 600 V | 1.65 V | 60 A | 100 nA | 20 V | ||||
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377
In-stock
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Fairchild Semiconductor | IGBT Transistors 24a 600V IGBT UFS N-Channel | Through Hole | TO-247-3 | + 150 C | Tube | 104 W | Single | 600 V | 1.65 V | 24 A | +/- 100 nA | +/- 20 V | ||||
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424
In-stock
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Fairchild Semiconductor | IGBT Transistors HGTP12N60C3D | Through Hole | TO-220-3 | + 150 C | Tube | 104 W | Single | 600 V | 1.65 V | 24 A | +/- 100 nA | +/- 20 V | ||||
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210
In-stock
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onsemi | IGBT Transistors 600V/30A IGBT LPT TO-247 | Through Hole | TO-247 | + 150 C | Tube | 250 W | Single | 600 V | 1.65 V | 60 A | 100 nA | 30 V |