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Pd - Power Dissipation :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Maximum Gate Emitter Voltage :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
STGP35HF60W
1+
$2.780
10+
$2.370
100+
$2.050
250+
$1.950
RFQ
876
In-stock
STMicroelectronics IGBT Transistors 35A Ultrafast IGBT 600V 100kHz Through Hole TO-220 + 150 C Tube 200 W Single 600 V 1.65 V 60 A 100 nA 20 V
HGTG12N60C3D
1+
$5.540
10+
$4.710
100+
$4.080
250+
$3.870
RFQ
377
In-stock
Fairchild Semiconductor IGBT Transistors 24a 600V IGBT UFS N-Channel Through Hole TO-247-3 + 150 C Tube 104 W Single 600 V 1.65 V 24 A +/- 100 nA +/- 20 V
HGTP12N60C3D
1+
$3.360
10+
$2.860
100+
$2.480
250+
$2.350
RFQ
424
In-stock
Fairchild Semiconductor IGBT Transistors HGTP12N60C3D Through Hole TO-220-3 + 150 C Tube 104 W Single 600 V 1.65 V 24 A +/- 100 nA +/- 20 V
NGTG30N60FLWG
1+
$3.870
10+
$3.290
100+
$2.850
250+
$2.710
RFQ
210
In-stock
onsemi IGBT Transistors 600V/30A IGBT LPT TO-247 Through Hole TO-247 + 150 C Tube 250 W Single 600 V 1.65 V 60 A 100 nA 30 V
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