- Mounting Style :
- Collector- Emitter Voltage VCEO Max :
- Gate-Emitter Leakage Current :
- Maximum Gate Emitter Voltage :
23 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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1,978
In-stock
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Fairchild Semiconductor | IGBT Transistors Dis High Perf IGBT | Through Hole | TO-220-3 | + 150 C | Tube | 100 W | Single | 600 V | 2.1 V | 23 A | +/- 100 nA | +/- 20 V | ||||
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1,723
In-stock
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Infineon Technologies | IGBT Transistors 600V ULTRAFAST 8-60KHZ DSCRETE IGBT | Through Hole | TO-220-3 | + 150 C | Tube | 100 W | Single | 600 V | 2.1 V | 23 A | 100 nA | +/- 20 V | ||||
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3,693
In-stock
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Infineon Technologies | IGBT Transistors 600V ULTRAFAST 8-60 KHZ COPACK IGBT | Through Hole | TO-247-3 | + 150 C | Tube | 100 W | Single | 600 V | 2.1 V | 23 A | +/- 20 V | |||||
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85
In-stock
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IXYS | IGBT Transistors G-SERIES A3/B3/C3 GENX3 IGBT 600V 52A | SMD/SMT | SOT-227B-4 | + 150 C | Tube | 360 W | 600 V | 2.1 V | 78 A | 100 nA | +/- 20 V | |||||
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676
In-stock
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Fairchild Semiconductor | IGBT Transistors 600V/12A | Through Hole | TO-3PF-3 | + 150 C | Tube | 75 W | Single | 600 V | 2.1 V | 23 A | +/- 100 nA | +/- 20 V | ||||
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734
In-stock
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Fairchild Semiconductor | IGBT Transistors 600V 7A NPT IGBT | SMD/SMT | TO-263AB (D2 PAK) | + 150 C | Reel | 83 W | Single | 600 V | 2.1 V | 14 A | +/- 10 uA | +/- 20 V | ||||
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6,000
In-stock
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STMicroelectronics | IGBT Transistors PowerMESH | Through Hole | TO-247-3 | + 150 C | Tube | 200 W | Single | 600 V | 2.1 V | 100 nA | +/- 20 V | |||||
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2,710
In-stock
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onsemi | IGBT Transistors Dis High Perf IGBT | Through Hole | TO-3P-3 | + 150 C | Tube | 160 W | Single | 600 V | 2.1 V | 40 A | +/- 100 nA | +/- 20 V | |||
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371
In-stock
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Infineon Technologies | IGBT Transistors 600V Warp 60-150kHz | Through Hole | TO-220FP-3 | + 150 C | Tube | 45 W | Single | 600 V | 2.1 V | 17 A | 100 nA | +/- 20 V | ||||
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28
In-stock
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IXYS | IGBT Transistors 650V/240A TRENCH IGBT GENX4 XPT | SMD/SMT | SOT-227 | + 150 C | Tube | 750 W | Single | 650 V | 2.1 V | 215 A | 100 nA | 30 V | ||||
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349
In-stock
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Infineon Technologies | IGBT Transistors 600V WARP 60-150 KHZ DISCRETE IGBT | SMD/SMT | D-PAK-3 | + 150 C | Tube | 100 W | Single | 600 V | 2.1 V | 23 A | 100 nA | +/- 20 V | ||||
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50
In-stock
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IXYS | IGBT Transistors 35 Amps 600V | Through Hole | TO-220-3 | + 150 C | Tube | Single | 600 V | 2.1 V | +/- 20 V | |||||||
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619
In-stock
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STMicroelectronics | IGBT Transistors PowerMESH" IGBT | SMD/SMT | D2PAK-3 | + 150 C | Reel | Single | 600 V | 2.1 V | 2 A | +/- 20 V | ||||||
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22
In-stock
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IXYS | IGBT Transistors G-SERIES A3/B3/C3 GENX3 IGBT 600V 75A | Through Hole | ISOPLUS 247-3 | + 150 C | Tube | 200 W | 600 V | 2.1 V | 75 A | 100 nA | +/- 20 V | |||||
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20
In-stock
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IXYS | IGBT Transistors 35 Amps 600V | Through Hole | TO-247-3 | + 150 C | Tube | Single | 600 V | 2.1 V | +/- 20 V | |||||||
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77
In-stock
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Infineon Technologies | IGBT Transistors 600V ULTRAFAST 8-60 KHZ COPACK IGBT | SMD/SMT | D-PAK-3 | + 150 C | Tube | 60 W | Single | 600 V | 2.1 V | 13 A | 100 nA | +/- 20 V | ||||
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30
In-stock
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IXYS | IGBT Transistors 35 Amps 600V | Through Hole | TO-247-3 | + 150 C | Tube | Single | 600 V | 2.1 V | +/- 20 V | |||||||
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516
In-stock
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Fairchild Semiconductor | IGBT Transistors 43A 1200V NCh w/Anti Parallel Hyprfst Dde | Through Hole | TO-247-3 | + 150 C | Tube | 298 W | Single | 1200 V | 2.1 V | 43 A | +/- 250 nA | +/- 20 V | ||||
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3,400
In-stock
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onsemi | IGBT Transistors Dis High Perf IGBT | Through Hole | TO-264-3 | + 150 C | Tube | 250 W | Single | 600 V | 2.1 V | 160 A | +/- 100 nA | +/- 20 V | ||||
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900
In-stock
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Fairchild Semiconductor | IGBT Transistors 600V, 40A Field Stop IGBT | Through Hole | TO-247 | + 150 C | Tube | 349 W | 2.1 V | 80 A | +/- 400 nA | |||||||
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VIEW | Infineon Technologies | IGBT Transistors 600V ULTRAFAST 8-60KHZ DSCRETE IGBT | Through Hole | TO-247-3 | + 150 C | Tube | 100 W | Single | 600 V | 2.1 V | 23 A | +/- 20 V | |||||
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VIEW | Infineon Technologies | IGBT Transistors 600V FAST 1-8 KHZ SINGLE IGBT | SMD/SMT | DPAK-3 | + 150 C | Reel | 66 W | Single | 600 V | 2.1 V | 22 A | +/- 20 V | |||||
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VIEW | Fairchild Semiconductor | IGBT Transistors Dis High Perf IGBT | Through Hole | TO-220-3 | + 150 C | Tube | 100 W | Single | 600 V | 2.1 V | 23 A | +/- 100 nA | +/- 20 V |