PART NO.	PRICE		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
FGH40N65UFDTU	1+ $4.500 10+ $3.830 100+ $3.320 250+ $3.150	PDF RFQ	403 In-stock	Fairchild Semiconductor	IGBT Transistors N-ch / 40A 650V	Through Hole	TO-247AB-3	+ 150 C	Tube		Single	650 V				+/- 20 V
FGPF4565	1+ $1.890 10+ $1.600 100+ $1.280 500+ $1.130	PDF RFQ	630 In-stock	Fairchild Semiconductor	IGBT Transistors 650V FS Trench for IPL Application	Through Hole	TO-220F	+ 150 C	Tube	30 W		650 V	1.88 V	170 A	400 nA	25 V
IXXN110N65B4H1	1+ $21.970 5+ $21.740 10+ $20.260 25+ $19.350	PDF RFQ	28 In-stock	IXYS	IGBT Transistors 650V/240A TRENCH IGBT GENX4 XPT	SMD/SMT	SOT-227	+ 150 C	Tube	750 W	Single	650 V	2.1 V	215 A	100 nA	30 V
APT95GR65B2	1+ $10.550 10+ $9.490 25+ $8.650 50+ $8.060	PDF RFQ	59 In-stock	Microsemi	IGBT Transistors Insulated Gate Bipolar Transistor - Power MOS 8	Through Hole	TO-247-3	+ 150 C		892 W	Single	650 V		208 A	+/- 250 nA	+/- 30 V
APT45GR65B	1+ $6.290 10+ $5.060 25+ $4.970 100+ $4.610	PDF RFQ	98 In-stock	Microsemi	IGBT Transistors Insulated Gate Bipolar Transistor - Power MOS 8	Through Hole	TO-247-3	+ 150 C		543 W	Single	650 V	1.9 V	118 A	250 nA	30 V
FGH40N65UFDTU_F085	1+ $4.980 10+ $4.240 100+ $3.670 250+ $3.490	PDF RFQ	51 In-stock	Fairchild Semiconductor	IGBT Transistors N-ch / 40A 650V IGBT	Through Hole	TO-247-3	+ 150 C	Tube	290 W	Single	650 V	1.8 V	80 A	+/- 400 nA	+/- 20 V