- Manufacture :
- Mounting Style :
- Package / Case :
- Gate-Emitter Leakage Current :
- Maximum Gate Emitter Voltage :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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939
In-stock
|
STMicroelectronics | IGBT Transistors N-Ch Clamped 20 Amp | SMD/SMT | D2PAK-3 | + 150 C | Reel | 200 W | Single | 20 V | 2 V | 40 A | +/- 660 uA | 12 V | |||
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2,410
In-stock
|
Infineon Technologies | IGBT Transistors 600V UltraFast 8-60kHz | Through Hole | TO-247-3 | + 150 C | Tube | 200 W | Single | 600 V | 2 V | 55 A | 100 nA | 20 V | |||
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93
In-stock
|
Infineon Technologies | IGBT Transistors 600V UltraFast 8-60kHz | Through Hole | TO-247-3 | Tube | 200 W | Single | 600 V | 2 V | 55 A | +/- 20 V | |||||
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2,150
In-stock
|
Infineon Technologies | IGBT Transistors 600V UltraFast 8-60kHz | Through Hole | TO-247-3 | Tube | 200 W | Single | 600 V | 2 V | 55 A | +/- 20 V | |||||
|
|
630
In-stock
|
STMicroelectronics | IGBT Transistors N-Ch Clamped 20 Amp | SMD/SMT | D2PAK-3 | + 150 C | Reel | 200 W | Single | 20 V | 2 V | 40 A | +/- 660 uA | 12 V |
