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Maximum Operating Temperature :
Collector- Emitter Voltage VCEO Max :
Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
IXYN82N120C3H1
1+
$36.670
5+
$36.290
10+
$33.820
25+
$32.310
RFQ
35
In-stock
IXYS IGBT Transistors XPT IGBT C3-Class 1200V/105A; Copack SMD/SMT SOT-227B-4 + 150 C Tube 500 W Single 1200 V 2.75 V 105 A 100 nA 30 V
APT40GR120B2D30
1+
$11.500
10+
$10.350
25+
$9.430
50+
$8.780
RFQ
54
In-stock
Microsemi IGBT Transistors Insulated Gate Bipolar Transistor - Power MOS 8 Through Hole TO-247-3 + 150 C   500 W Single 1.2 kV 2.5 V 88 A 250 nA 30 V
APT64GA90LD30
1+
$12.450
10+
$11.320
25+
$10.470
50+
$9.900
RFQ
48
In-stock
Microsemi IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS... Through Hole TO-264-3 + 150 C Tube 500 W Single 900 V 2.5 V 117 A 100 nA 30 V
IXYH30N120C3
1+
$8.020
10+
$7.250
25+
$6.910
100+
$6.000
RFQ
30
In-stock
IXYS IGBT Transistors 1200V XPT GenX3 IGBT Through Hole TO-247-3 + 150 C Tube 500 W Single 1200 V 3.7 V 75 A 100 nA 30 V
IXYP30N120C3
1+
$6.590
10+
$5.960
50+
$5.680
100+
$4.940
RFQ
70
In-stock
IXYS IGBT Transistors GenX3 1200V XPT IGBT Through Hole TO-220-3 + 175 C Tube 500 W Single 1200 V 3.7 V 75 A 100 nA 30 V
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