- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Gate-Emitter Leakage Current :
- Maximum Gate Emitter Voltage :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
520
In-stock
|
Fairchild Semiconductor | IGBT Transistors 600V 40A FIELD STOP PLANAR IGBT GEN... | SMD/SMT | TO-263AB (D2 PAK) | + 175 C | Reel | 349 W | Single | 600 V | 2.3 V | 80 A | +/- 400 nA | +/- 20 V | |||
|
|
490
In-stock
|
Fairchild Semiconductor | IGBT Transistors 600V/40A FS Planar IGBT Gen 2 | Through Hole | TO-247-3 | + 175 C | Tube | 349 W | Single | 600 V | 2.1 V | 80 A | 400 nA | +/- 20 V | |||
|
|
493
In-stock
|
Fairchild Semiconductor | IGBT Transistors 600V/40A Field Stop IGBT ver. 2 | Through Hole | TO-247 | + 150 C | Tube | 349 W | 600 V | 1.9 V | 80 A | 400 nA | 20 V | ||||
|
|
900
In-stock
|
Fairchild Semiconductor | IGBT Transistors 600V, 40A Field Stop IGBT | Through Hole | TO-247 | + 150 C | Tube | 349 W | 2.1 V | 80 A | +/- 400 nA | ||||||
|
|
437
In-stock
|
Fairchild Semiconductor | IGBT Transistors 650V, 40A Field Stop IGBT | Through Hole | TO-3PN | Tube | 349 W | 650 V | 2.5 V | 80 A | 400 nA | 20 V |
