- Collector-Emitter Saturation Voltage :
- Gate-Emitter Leakage Current :
- Maximum Gate Emitter Voltage :
- Applied Filters :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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176
In-stock
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Fairchild Semiconductor | IGBT Transistors 650V FS4 Trench IGBT | Through Hole | TO-247-3 | + 175 C | Tube | 268 W | Single | 650 V | 1.6 V | 100 A | +/- 400 nA | +/- 20 V | |||
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2,599
In-stock
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Fairchild Semiconductor | IGBT Transistors 650V FS Gen3 Trench IGBT | Through Hole | TO-247-3 | + 175 C | Tube | 268 W | Single | 650 V | 1.6 V | 80 A | +/- 400 nA | +/- 20 V | |||
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532
In-stock
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Infineon Technologies | IGBT Transistors 600V 76A | Through Hole | TO-247-3 | Tube | 268 W | Single | 600 V | 1.85 V | 76 A | +/- 20 V | |||||
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338
In-stock
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Fairchild Semiconductor | IGBT Transistors 650V FS Gen3 Trench IGBT | Through Hole | TO-247-3 | + 175 C | Tube | 268 W | Single | 650 V | 1.45 V | 80 A | 400 nA | 30 V | |||
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408
In-stock
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Fairchild Semiconductor | IGBT Transistors 650V FS Gen3 Trench IGBT | Through Hole | TO-247-3 | + 175 C | Tube | 268 W | Single | 700 V | 2.37 V | 80 A | +/- 400 nA | +/- 20 V | |||
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71
In-stock
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IR / Infineon | IGBT Transistors 600V 76A | Through Hole | TO-247-3 | + 175 C | Tube | 268 W | Single | 600 V | 1.6 V | 76 A | 100 nA | +/- 20 V |
