- Manufacture :
- Package / Case :
- Maximum Operating Temperature :
- Collector- Emitter Voltage VCEO Max :
- Collector-Emitter Saturation Voltage :
- Gate-Emitter Leakage Current :
4 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
338
In-stock
|
Fairchild Semiconductor | IGBT Transistors 650V FS Gen3 Trench IGBT | Through Hole | TO-247-3 | + 175 C | Tube | 268 W | Single | 650 V | 1.45 V | 80 A | 400 nA | 30 V | ||||
|
351
In-stock
|
Fairchild Semiconductor | IGBT Transistors 650V FS Gen3 Trench IGBT | Through Hole | TO-3PN | + 175 C | Tube | 268 W | 650 V | 1.81 V | 80 A | 400 nA | 30 V | |||||
|
185
In-stock
|
Fairchild Semiconductor | IGBT Transistors 650V FS Gen3 Trench IGBT | Through Hole | TO-3PN | + 175 C | Tube | 268 W | 650 V | 2.14 V | 80 A | 400 nA | 30 V | |||||
|
122
In-stock
|
onsemi | IGBT Transistors 1200V/40 FAST IGBT FSII T | Through Hole | TO-247-4 | - 55 C | Tube | 268 W | Single | 1200 V | 160 A | 200 nA | 30 V |