1 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
30
In-stock
|
onsemi | IGBT Transistors 1200V/50 FAST IGBT FSII T | Through Hole | TO-247-4 | + 175 C | Tube | 268 W | 1200 V | 2.8 V | 200 A | 200 nA | 20 V |