IGBT Transistors - Kaimeite

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IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
	APT45GP120J	1+ $37.280 2+ $36.260 5+ $35.260 10+ $34.250		PDF RFQ	13 In-stock	Microsemi	IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS...	Screw	SOT-227-4	+ 150 C		329 W	N-Channel	1.2 kV	3.3 V	34 A	100 nA	+/- 20 V
	VS-GA200SA60UP	1+ $39.520 5+ $37.730 10+ $36.550 25+ $33.590		PDF RFQ	160 In-stock	Vishay Semiconductors	IGBT Transistors N-Ch 600 Volt 100A	SMD/SMT	SOT-227-4	+ 150 C	Tube		Single	600 V				+/- 20 V