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Pd - Power Dissipation :
Collector- Emitter Voltage VCEO Max :
Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
IXBK55N300
1+
$66.560
5+
$65.340
10+
$63.650
25+
$62.400
RFQ
166
In-stock
IXYS IGBT Transistors Through Hole TO-264-3 + 150 C Tube 625 W Single 3 kV 2.7 V 130 A +/- 200 nA +/- 25 V
FGL40N120AND
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RFQ
24,400
In-stock
Fairchild Semiconductor IGBT Transistors 1200V NPT IGBT Through Hole TO-264-3 + 150 C Tube   Single 1200 V       +/- 25 V
FGL60N100BNTDTU
GET PRICE
RFQ
4,000
In-stock
Fairchild Semiconductor IGBT Transistors HIGH POWER Through Hole TO-264-3 + 150 C Tube 180 W Single 1000 V 1.5 V 60 A +/- 500 nA +/- 25 V
FGL40N120ANTU
1+
$10.110
10+
$9.140
25+
$8.720
100+
$7.570
RFQ
167
In-stock
Fairchild Semiconductor IGBT Transistors 1200V NPT IGBT Through Hole TO-264-3 + 150 C Tube   Single 1200 V       +/- 25 V
FGL60N100BNTD
1+
$6.000
10+
$5.000
100+
$4.000
250+
$4.000
RFQ
5,650
In-stock
Fairchild Semiconductor IGBT Transistors HIGH POWER Through Hole TO-264-3 + 150 C Tube 180 W Single 1000 V 1.5 V 60 A +/- 500 nA +/- 25 V
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