- Manufacture :
- Mounting Style :
- Maximum Operating Temperature :
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9 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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204
In-stock
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IXYS | IGBT Transistors XPT IGBT C3-Class 1200V/160A; Copack | Through Hole | TO-264-3 | + 150 C | Tube | 1040 W | Single | 1200 V | 2.75 V | 164 A | 100 nA | 30 V | ||||
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265
In-stock
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Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low F... | Through Hole | TO-264-3 | + 175 C | 536 W | Single | 600 V | 1.45 V | 155 A | 600 nA | 30 V | |||||
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105
In-stock
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Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low F... | Through Hole | TO-264-3 | + 150 C | 833 W | Single | 1.2 kV | 1.7 V | 200 A | 600 nA | 30 V | |||||
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98
In-stock
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Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low F... | Through Hole | TO-264-3 | + 150 C | 543 W | Single | 1.2 kV | 1.7 V | 134 A | 600 nA | 30 V | |||||
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75
In-stock
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Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low F... | Through Hole | TO-264-3 | + 175 C | 625 W | Single | 600 V | 1.5 V | 229 A | 600 nA | 30 V | |||||
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55
In-stock
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Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low F... | Through Hole | TO-264-3 | + 150 C | 379 W | Single | 1.2 kV | 1.7 V | 94 A | 600 nA | 30 V | |||||
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22
In-stock
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Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS... | SMD/SMT | TO-264-3 | + 150 C | Tube | 625 W | Single | 600 V | 2 V | 143 A | 100 nA | 30 V | ||||
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20
In-stock
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IXYS | IGBT Transistors 1200V 188A XPT IGBT | Through Hole | TO-264-3 | + 175 C | Tube | 1150 W | Single | 1200 V | 2.9 V | 188 A | 100 nA | 30 V | ||||
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48
In-stock
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Microsemi | IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS... | Through Hole | TO-264-3 | + 150 C | Tube | 500 W | Single | 900 V | 2.5 V | 117 A | 100 nA | 30 V |