PART NO.	PRICE		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
APT75GN60LDQ3G	1+ $11.720 10+ $10.550 25+ $9.610 50+ $8.950	PDF RFQ	265 In-stock	Microsemi	IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low F...	Through Hole	TO-264-3	+ 175 C	536 W	Single	600 V	1.45 V	155 A	600 nA	30 V
APT75GN120LG	1+ $16.210 10+ $14.740 25+ $13.630 50+ $12.890	PDF RFQ	105 In-stock	Microsemi	IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low F...	Through Hole	TO-264-3	+ 150 C	833 W	Single	1.2 kV	1.7 V	200 A	600 nA	30 V
APT50GN120L2DQ2G	1+ $17.780 10+ $16.160 25+ $14.940 50+ $14.140	PDF RFQ	98 In-stock	Microsemi	IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low F...	Through Hole	TO-264-3	+ 150 C	543 W	Single	1.2 kV	1.7 V	134 A	600 nA	30 V
APT100GN60LDQ4G	1+ $14.810 10+ $13.460 25+ $12.450 50+ $11.770	PDF RFQ	75 In-stock	Microsemi	IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low F...	Through Hole	TO-264-3	+ 175 C	625 W	Single	600 V	1.5 V	229 A	600 nA	30 V
APT35GN120L2DQ2G	1+ $12.150 10+ $10.930 25+ $9.960 50+ $9.280	PDF RFQ	55 In-stock	Microsemi	IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low F...	Through Hole	TO-264-3	+ 150 C	379 W	Single	1.2 kV	1.7 V	94 A	600 nA	30 V