- Maximum Operating Temperature :
- Pd - Power Dissipation :
- Collector- Emitter Voltage VCEO Max :
- Maximum Gate Emitter Voltage :
- Applied Filters :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
71
In-stock
|
IXYS | IGBT Transistors 650V/370A TRENCH IGBT GENX4 XPT | Through Hole | TO-264-3 | + 175 C | Tube | 1150 W | Single | 650 V | 1.4 V | 370 A | 200 nA | 20 V | |||
|
|
14
In-stock
|
IXYS | IGBT Transistors GenX3 XPT 600V | Through Hole | TO-264-3 | + 175 C | Tube | 1.63 kW | Single | 600 V | 1.4 V | 380 A | 200 nA | +/- 20 V | |||
|
|
30
In-stock
|
IXYS | IGBT Transistors HIGH VOLT NPT IGBTS 1700V 100A | Through Hole | TO-264-3 | + 150 C | Tube | 830 W | Single | 1.7 kV | 2.5 V | 170 A | 200 nA | +/- 20 V | |||
|
|
34
In-stock
|
IXYS | IGBT Transistors 650V/310A TRENCH IGBT GENX4 XPT | Through Hole | TO-264-3 | + 175 C | Tube | 940 W | Single | 650 V | 1.54 V | 310 A | 200 nA | 20 V | |||
|
|
50
In-stock
|
IXYS | IGBT Transistors XPT 600V IGBT GenX3 | Through Hole | TO-264-3 | + 175 C | Tube | 1.63 kW | Single | 600 V | 1.6 V | 340 A | 200 nA | +/- 20 V | |||
|
|
VIEW | IXYS | IGBT Transistors 650V/290A Trench IGBT GenX4 XPT | Through Hole | TO-264-3 | + 175 C | Tube | 940 W | Single | 650 V | 1.7 V | 290 A | 200 nA | 20 V |
