IGBT Transistors - Kaimeite

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PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
IXGK100N170	1+ $31.980 5+ $31.650 10+ $29.500 25+ $28.180		PDF RFQ	30 In-stock	IXYS	IGBT Transistors HIGH VOLT NPT IGBTS 1700V 100A	Through Hole	TO-264-3	+ 150 C	Tube	830 W	Single	1.7 kV	2.5 V	170 A	200 nA	+/- 20 V
APT64GA90LD30	1+ $12.450 10+ $11.320 25+ $10.470 50+ $9.900		PDF RFQ	48 In-stock	Microsemi	IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS...	Through Hole	TO-264-3	+ 150 C	Tube	500 W	Single	900 V	2.5 V	117 A	100 nA	30 V
IXGK50N60C2D1	25+ $9.130 100+ $7.930 250+ $7.570 500+ $6.900	GET PRICE VIEW	PDF RFQ		IXYS	IGBT Transistors 50 Amps 600V 2.5V Rds	Through Hole	TO-264-3	+ 150 C	Tube		Single	600 V	2.5 V			+/- 20 V