- Pd - Power Dissipation :
- Maximum Gate Emitter Voltage :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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71
In-stock
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IXYS | IGBT Transistors 650V/370A TRENCH IGBT GENX4 XPT | Through Hole | TO-264-3 | + 175 C | Tube | 1150 W | Single | 650 V | 1.4 V | 370 A | 200 nA | 20 V | |||
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14
In-stock
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IXYS | IGBT Transistors GenX3 XPT 600V | Through Hole | TO-264-3 | + 175 C | Tube | 1.63 kW | Single | 600 V | 1.4 V | 380 A | 200 nA | +/- 20 V |
