PART NO.	PRICE		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
APT75GN120LG	1+ $16.210 10+ $14.740 25+ $13.630 50+ $12.890	PDF RFQ	105 In-stock	Microsemi	IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low F...	Through Hole	TO-264-3	+ 150 C		833 W	Single	1.2 kV	1.7 V	200 A	600 nA	30 V
APT50GN120L2DQ2G	1+ $17.780 10+ $16.160 25+ $14.940 50+ $14.140	PDF RFQ	98 In-stock	Microsemi	IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low F...	Through Hole	TO-264-3	+ 150 C		543 W	Single	1.2 kV	1.7 V	134 A	600 nA	30 V
IXGK120N120A3	1+ $23.990 5+ $23.740 10+ $22.130 25+ $21.140	PDF RFQ	75 In-stock	IXYS	IGBT Transistors 120 Amps 1200V	Through Hole	TO-264-3	+ 150 C	Tube	830 W	Single	1.2 kV	1.85 V	240 A	400 nA	+/- 20 V
APT35GN120L2DQ2G	1+ $12.150 10+ $10.930 25+ $9.960 50+ $9.280	PDF RFQ	55 In-stock	Microsemi	IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low F...	Through Hole	TO-264-3	+ 150 C		379 W	Single	1.2 kV	1.7 V	94 A	600 nA	30 V