IGBT Transistors - Kaimeite

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IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
	FGL60N100BNTDTU		GET PRICE	PDF RFQ	4,000 In-stock	Fairchild Semiconductor	IGBT Transistors HIGH POWER	Through Hole	TO-264-3	+ 150 C	Tube	180 W	Single	1000 V	1.5 V	60 A	+/- 500 nA	+/- 25 V
	FGL60N100BNTD	1+ $6.000 10+ $5.000 100+ $4.000 250+ $4.000		PDF RFQ	5,650 In-stock	Fairchild Semiconductor	IGBT Transistors HIGH POWER	Through Hole	TO-264-3	+ 150 C	Tube	180 W	Single	1000 V	1.5 V	60 A	+/- 500 nA	+/- 25 V

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