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Pd - Power Dissipation :
Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Mounting Style Package / Case Maximum Operating Temperature Packaging Pd - Power Dissipation Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Maximum Gate Emitter Voltage
IXXK200N65B4
1+
$17.110
10+
$15.740
25+
$15.080
100+
$13.290
RFQ
71
In-stock
IXYS IGBT Transistors 650V/370A TRENCH IGBT GENX4 XPT Through Hole TO-264-3 + 175 C Tube 1150 W Single 650 V 1.4 V 370 A 200 nA 20 V
IXXK110N65B4H1
1+
$10.980
10+
$10.100
25+
$9.680
100+
$8.530
RFQ
92
In-stock
IXYS IGBT Transistors 650V/240A TRENCH IGBT GENX4 XPT Through Hole TO-264-3 + 175 C Tube 880 W Single 650 V 1.75 V 240 A 100 nA 20 V
IXXK160N65B4
1+
$13.400
10+
$12.320
25+
$11.810
100+
$10.400
RFQ
34
In-stock
IXYS IGBT Transistors 650V/310A TRENCH IGBT GENX4 XPT Through Hole TO-264-3 + 175 C Tube 940 W Single 650 V 1.54 V 310 A 200 nA 20 V
IXXK160N65C4
VIEW
RFQ
IXYS IGBT Transistors 650V/290A Trench IGBT GenX4 XPT Through Hole TO-264-3 + 175 C Tube 940 W Single 650 V 1.7 V 290 A 200 nA 20 V
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