- Manufacture :
- Maximum Operating Temperature :
- Pd - Power Dissipation :
- Collector- Emitter Voltage VCEO Max :
- Collector-Emitter Saturation Voltage :
- Gate-Emitter Leakage Current :
- Maximum Gate Emitter Voltage :
- Applied Filters :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
269
In-stock
|
IR / Infineon | IGBT Transistors 1200V 220A SUPER-247 | Through Hole | TO-274-3 | + 175 C | Tube | 1.15 kW | Single | 1.2 kV | 2 V | 220 A | 400 nA | +/- 30 V | |||
|
|
19
In-stock
|
Infineon Technologies | IGBT Transistors 600V UltraFast 8-25kHz | Through Hole | TO-274-3 | + 150 C | Tube | 350 W | Single | 600 V | 1.83 V | 85 A | 100 nA | +/- 20 V | |||
|
|
54
In-stock
|
Infineon Technologies | IGBT Transistors 1200V UltraFast 4-20kHz | Through Hole | TO-274-3 | + 150 C | Tube | 350 W | Single | 1.2 kV | 2.52 V | 99 A | 100 nA | +/- 20 V | |||
|
|
200
In-stock
|
IR / Infineon | IGBT Transistors 1200V UltraFast 5-40kHz | Through Hole | TO-274-3 | + 150 C | Tube | 595 W | Single | 1.2 kV | 2.33 V | 105 A | 100 nA | +/- 20 V | |||
|
|
47
In-stock
|
Infineon Technologies | IGBT Transistors 1200V UltraFast 4-20kHz | Through Hole | TO-274-3 | + 150 C | Tube | 350 W | Single | 1.2 kV | 2.97 V | 78 A | 100 nA | +/- 20 V |
