IGBT Transistors - Kaimeite

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IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Maximum Gate Emitter Voltage
	IRGSL4B60KD1PBF	1+ $1.920 10+ $1.630 100+ $1.310 500+ $1.140		PDF RFQ	172 In-stock	IR / Infineon	IGBT Transistors 600V Low-Vceon Non Punch Through	Through Hole	TO-262-3		Tube	63 W	Single	600 V	2.5 V	12 A	+/- 20 V
	IRG4BC40W-LPBF	1+ $3.200 10+ $2.720 100+ $2.350 250+ $2.230		PDF RFQ	115 In-stock	Infineon Technologies	IGBT Transistors 600V Warp 60-150kHz	Through Hole	TO-262-3	+ 150 C	Tube	160 W	Single	600 V	2.5 V	40 A	+/- 20 V

IRGSL4B60KD1PBF

IRGSL4B60KD1PBF

IR / Infineon

IGBT Transistors 600V Low-Vceon Non Punch Through

Stock : 172

1+: $1.920

10+: $1.630

100+: $1.310

500+: $1.140

IRG4BC40W-LPBF

IRG4BC40W-LPBF

Infineon Technologies

IGBT Transistors 600V Warp 60-150kHz

Stock : 115

1+: $3.200

10+: $2.720

100+: $2.350

250+: $2.230

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