- Maximum Operating Temperature :
- Collector- Emitter Voltage VCEO Max :
- Collector-Emitter Saturation Voltage :
- Gate-Emitter Leakage Current :
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17 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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422
In-stock
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Fairchild Semiconductor | IGBT Transistors 650V FS Gen3 Trench IGBT proliferation | Through Hole | TO-3PN | + 175 C | Tube | 238 W | Single | 600 V | 1.8 V | 80 A | 400 nA | 30 V | ||||
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4,240
In-stock
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Fairchild Semiconductor | IGBT Transistors USB Port Multimedia Switch | Through Hole | TO-3PN | + 175 C | Tube | 272 W | Single | 1400 V | 2.2 V | 40 A | 25 V | |||||
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805
In-stock
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Fairchild Semiconductor | IGBT Transistors 600V proliferation PFC home application | Through Hole | TO-3PN | + 175 C | Tube | 176 W | Single | 600 V | 1.8 V | 60 A | 400 nA | 30 V | ||||
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463
In-stock
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Fairchild Semiconductor | IGBT Transistors 1100 V, 50 A Shorted-anode IGBT | Through Hole | TO-3PN | + 175 C | Tube | 300 W | 1100 V | 2.7 V | 50 A | 500 nA | 25 V | |||||
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303
In-stock
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Fairchild Semiconductor | IGBT Transistors 650V, 60A Field Stop IGBT | Through Hole | TO-3PN | Tube | 600 W | 650 V | 1.9 V | 120 A | 400 nA | 20 V | ||||||
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352
In-stock
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Fairchild Semiconductor | IGBT Transistors 650V FS Gen3 Trench IGBT | Through Hole | TO-3PN | + 175 C | Tube | 306 W | Single | 650 V | 1.8 V | 120 A | +/- 400 nA | +/- 20 V | ||||
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435
In-stock
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Fairchild Semiconductor | IGBT Transistors Shorted AnodeTM IGBT | Through Hole | TO-3PN | + 175 C | Tube | 174 W | Single | 1300 V | 2.3 V | 60 A | 500 nA | 25 V | ||||
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432
In-stock
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Fairchild Semiconductor | IGBT Transistors 1300V 30A FS SA Trench IGBT | Through Hole | TO-3PN | + 175 C | Tube | 500 W | Single | 1300 V | 1.9 V | 60 A | 25 V | |||||
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401
In-stock
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Fairchild Semiconductor | IGBT Transistors FS3 650V SHD prolferation | Through Hole | TO-3PN | + 175 C | Tube | 268 W | Single | 650 V | 2.28 V | 100 A | +/- 400 nA | +/- 30 V | ||||
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467
In-stock
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Fairchild Semiconductor | IGBT Transistors 650V FS Gen3 Trench IGBT | Through Hole | TO-3PN | + 175 C | Tube | 319 W | 650 V | 2.14 V | 100 A | 400 nA | 30 V | |||||
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170
In-stock
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Fairchild Semiconductor | IGBT Transistors 650V FS Gen3 Trench IGBT | Through Hole | TO-3PN | + 175 C | Tube | 238 W | Single | 650 V | 1.8 V | 80 A | 400 nA | 20 V | ||||
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351
In-stock
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Fairchild Semiconductor | IGBT Transistors 650V FS Gen3 Trench IGBT | Through Hole | TO-3PN | + 175 C | Tube | 268 W | 650 V | 1.81 V | 80 A | 400 nA | 30 V | |||||
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185
In-stock
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Fairchild Semiconductor | IGBT Transistors 650V FS Gen3 Trench IGBT | Through Hole | TO-3PN | + 175 C | Tube | 268 W | 650 V | 2.14 V | 80 A | 400 nA | 30 V | |||||
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413
In-stock
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Fairchild Semiconductor | IGBT Transistors 650V FS Gen3 Trench IGBT | Through Hole | TO-3PN | + 175 C | Tube | 238 W | 650 V | 2.14 V | 60 A | 400 nA | 30 V | |||||
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62
In-stock
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Fairchild Semiconductor | IGBT Transistors N-ch / 50A 1000V | Through Hole | TO-3PN | + 150 C | Tube | 156 W | Single | 1000 V | 1.5 V | 50 A | 500 nA | 25 V | ||||
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172
In-stock
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Fairchild Semiconductor | IGBT Transistors 650V FS Gen3 Trench IGBT | Through Hole | TO-3PN | + 175 C | Tube | 306 W | Single | 650 V | 1.8 V | 120 A | 400 nA | 30 V | ||||
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437
In-stock
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Fairchild Semiconductor | IGBT Transistors 650V, 40A Field Stop IGBT | Through Hole | TO-3PN | Tube | 349 W | 650 V | 2.5 V | 80 A | 400 nA | 20 V |