- Gate-Emitter Leakage Current :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
812
In-stock
|
Fairchild Semiconductor | IGBT Transistors 600V/5A Field Stop Low Vcesat | Through Hole | TO-220-3 | + 125 C | Tube | 83 W | 600 V | 1.8 V | 10 A | 400 nA | 20 V | |||
|
|
2,500
In-stock
|
Fairchild Semiconductor | IGBT Transistors SPM for Front-End Rectifier;Motion-SPM | Through Hole | + 125 C | Tube | 104 W | 600 V | 30 A | 250 uA |
