- Package / Case :
- Maximum Operating Temperature :
- Collector- Emitter Voltage VCEO Max :
- Collector-Emitter Saturation Voltage :
- Gate-Emitter Leakage Current :
- Maximum Gate Emitter Voltage :
- Applied Filters :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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139
In-stock
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IXYS | IGBT Transistors XPT IGBT B3-Class 600V/210Amp | Through Hole | TO-247AD | + 150 C | Tube | 830 W | 600 V | 1.8 V | 210 A | 100 nA | 20 V | ||||
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75
In-stock
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IXYS | IGBT Transistors 120 Amps 1200V | Through Hole | TO-264-3 | + 150 C | Tube | 830 W | Single | 1.2 kV | 1.85 V | 240 A | 400 nA | +/- 20 V | |||
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98
In-stock
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IXYS | IGBT Transistors 650V/200A XPT C3-Class TO-247 | Through Hole | TO-247-3 | + 175 C | Tube | 830 W | Single | 650 V | 1.85 V | 200 A | 100 nA | 30 V | |||
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24
In-stock
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IXYS | IGBT Transistors 120 Amps 1200V | Through Hole | PLUS 247-3 | + 150 C | Tube | 830 W | Single | 1.2 kV | 1.85 V | 240 A | 400 nA | +/- 20 V | |||
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30
In-stock
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IXYS | IGBT Transistors HIGH VOLT NPT IGBTS 1700V 100A | Through Hole | TO-264-3 | + 150 C | Tube | 830 W | Single | 1.7 kV | 2.5 V | 170 A | 200 nA | +/- 20 V | |||
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20
In-stock
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IXYS | IGBT Transistors XPT IGBT C3-Class 600V/190Amp | Through Hole | TO-247AD | + 150 C | Tube | 830 W | 600 V | 2.2 V | 190 A | 100 nA | 20 V | ||||
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VIEW | IXYS | IGBT Transistors HIGH VOLT NPT IGBTS 1700V 100A | Through Hole | PLUS 247-3 | + 150 C | Tube | 830 W | Single | 1.7 kV | 2.5 V | 170 A | 200 nA | +/- 20 V |
