- Manufacture :
- Maximum Operating Temperature :
- Configuration :
- Collector- Emitter Voltage VCEO Max :
- Collector-Emitter Saturation Voltage :
- Maximum Gate Emitter Voltage :
50 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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6,820
In-stock
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Infineon Technologies | IGBT Transistors LOW LOSS DuoPack 1200V 40A | Through Hole | TO-247-3 | + 175 C | Tube | 480 W | Single | 1200 V | 2.3 V | 75 A | 200 nA | 20 V | ||||
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217
In-stock
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IXYS | IGBT Transistors XPT 600V IGBT 300A | Through Hole | PLUS 247-3 | + 175 C | Tube | 2.3 kW | Single | 600 V | 1.3 V | 550 A | 200 nA | +/- 20 V | ||||
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647
In-stock
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IR / Infineon | IGBT Transistors 600V UltraFast IGBT TO-247 | Through Hole | TO-247AD-3 | + 175 C | Tube | 483 W | Single | 600 V | 1.65 V | 140 A | 200 nA | 20 V | ||||
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71
In-stock
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IXYS | IGBT Transistors 650V/370A TRENCH IGBT GENX4 XPT | Through Hole | TO-264-3 | + 175 C | Tube | 1150 W | Single | 650 V | 1.4 V | 370 A | 200 nA | 20 V | ||||
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5,000
In-stock
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Infineon Technologies | IGBT Transistors LOW LOSS DuoPack 1200V 40A | Through Hole | TO-247-3 | + 175 C | Tube | 480 W | Single | 1200 V | 2.3 V | 75 A | 200 nA | 20 V | ||||
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101
In-stock
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IR / Infineon | IGBT Transistors 1200V UltraFast 4-20kHz Copack IGBT | Through Hole | TO-247-3 | + 150 C | Tube | 520 W | Single | 1200 V | 2.4 V | 120 A | 200 nA | +/- 30 V | ||||
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70
In-stock
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Infineon Technologies | IGBT Transistors 1200V 140A | Through Hole | TO-247-3 | + 175 C | Tube | 556 W | Single | 1.2 kV | 1.7 V | 140 A | 200 nA | +/- 30 V | ||||
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49
In-stock
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IXYS | IGBT Transistors 650V/370A Trench IGBT GenX4 XPT | Through Hole | PLUS247-3 | + 175 C | Tube | 1150 W | Single | 650 V | 370 A | 200 nA | 20 V | |||||
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45
In-stock
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IXYS | IGBT Transistors 650V/310A TRENCH IGBT GENX4 XPT | Through Hole | PLUS 247-3 | + 175 C | Tube | 940 W | Single | 650 V | 1.54 V | 310 A | 200 nA | 20 V | ||||
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14
In-stock
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IXYS | IGBT Transistors GenX3 XPT 600V | Through Hole | TO-264-3 | + 175 C | Tube | 1.63 kW | Single | 600 V | 1.4 V | 380 A | 200 nA | +/- 20 V | ||||
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18
In-stock
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IXYS | IGBT Transistors 650V/290A TRENCH IGBT GENX4 XPT | Through Hole | PLUS 247-3 | + 175 C | Tube | 940 W | Single | 650 V | 1.7 V | 290 A | 200 nA | 20 V | ||||
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30
In-stock
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IXYS | IGBT Transistors HIGH VOLT NPT IGBTS 1700V 100A | Through Hole | TO-264-3 | + 150 C | Tube | 830 W | Single | 1.7 kV | 2.5 V | 170 A | 200 nA | +/- 20 V | ||||
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34
In-stock
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IXYS | IGBT Transistors 650V/310A TRENCH IGBT GENX4 XPT | Through Hole | TO-264-3 | + 175 C | Tube | 940 W | Single | 650 V | 1.54 V | 310 A | 200 nA | 20 V | ||||
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50
In-stock
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IXYS | IGBT Transistors 60 Amps 600V | Through Hole | ISOPLUS i4-PAC-5 | + 150 C | Tube | 200 W | Single | 600 V | 1.6 V | 65 A | 200 nA | +/- 20 V | ||||
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17
In-stock
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IXYS | IGBT Transistors 30 Amps 600V | Through Hole | ISOPLUS i4-PAC-5 | + 150 C | Tube | 100 W | Dual | 600 V | 1.9 V | 30 A | 200 nA | +/- 20 V | ||||
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21
In-stock
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Infineon Technologies | IGBT Transistors 600V UltraFast IGBT TO-247 | Through Hole | TO-247AC-3 | + 175 C | Tube | 483 W | Single | 600 V | 1.65 V | 140 A | 200 nA | 20 V | ||||
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1,137
In-stock
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onsemi | IGBT Transistors 1200V/50A FAST IGBT FSII | Through Hole | TO-247 | + 175 C | Tube | 535 W | Single | 1200 V | 2.2 V | 100 A | 200 nA | 30 V | ||||
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122
In-stock
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onsemi | IGBT Transistors 1200V/40 FAST IGBT FSII T | Through Hole | TO-247-4 | - 55 C | Tube | 268 W | Single | 1200 V | 160 A | 200 nA | 30 V | |||||
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179
In-stock
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onsemi | IGBT Transistors IGBT 1200V 40A FS3 LOW | Through Hole | TO247-3 | + 175 C | Tube | 454 W | Single | 1.2 kV | 1.55 V | 160 A | 200 nA | +/- 20 V | ||||
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194
In-stock
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onsemi | IGBT Transistors IGBT 1200V 40A FS3 SOLAR/ | Through Hole | TO247-3 | + 175 C | Tube | 454 W | Single | 1.2 kV | 1.7 V | 160 A | 200 nA | +/- 20 V | ||||
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260
In-stock
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onsemi | IGBT Transistors IGBT 1200V 40A FS3 LOW VF | Through Hole | TO-247-3 | + 175 C | Tube | 454 W | Single | 1.2 kV | 2.3 V | 160 A | 200 nA | +/- 20 V | ||||
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442
In-stock
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onsemi | IGBT Transistors IGBT 1200V 25A FS3 SOLAR/ | Through Hole | TO247-3 | + 175 C | Tube | 349 W | Single | 1.2 kV | 1.7 V | 100 A | 200 nA | +/- 20 V | ||||
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185
In-stock
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onsemi | IGBT Transistors 600V/50A IGBT NPT TO-247 | Through Hole | TO-247 | + 150 C | Tube | 223 W | Single | 600 V | 1.45 V | 100 A | 200 nA | 30 V | ||||
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116
In-stock
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onsemi | IGBT Transistors 650V/60A FAST IGBT FSII | Through Hole | TO-247-3 | + 175 C | Tube | 595 W | Single | 650 V | 1.64 V | 100 A | 200 nA | +/- 20 V | ||||
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301
In-stock
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onsemi | IGBT Transistors 650V/40A FAST IGBT FSII T | Through Hole | TO-247-3 | + 175 C | Tube | 366 W | Single | 650 V | 2.1 V | 80 A | 200 nA | 20 V | ||||
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142
In-stock
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onsemi | IGBT Transistors 600V/40A FAST IGBT FSII T | Through Hole | TO-247-3 | + 175 C | Tube | 417 W | Single | 600 V | 2 V | 80 A | 200 nA | 20 V | ||||
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165
In-stock
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onsemi | IGBT Transistors FSII 45A 600V Welding | Through Hole | TO-247-3 | + 175 C | Tube | 300 W | Single | 600 V | 2 V | 90 A | 200 nA | +/- 20 V | ||||
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74
In-stock
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onsemi | IGBT Transistors 1200V/30A LOW VCE SAT FSII | Through Hole | TO-247 | + 175 C | Tube | 534 W | Single | 1200 V | 1.7 V | 60 A | 200 nA | 30 V | ||||
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46
In-stock
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onsemi | IGBT Transistors FSII 75A 600V Welding | Through Hole | TO-247-3 | + 175 C | Tube | 595 W | Single | 600 V | 1.7 V | 100 A | 200 nA | +/- 20 V | ||||
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206
In-stock
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onsemi | IGBT Transistors 600V/60A IGBT LPT TO-247 | Through Hole | TO-247-3 | + 150 C | Tube | 298 W | Single | 600 V | 2.6 V | 120 A | 200 nA | 20 V |