- Maximum Operating Temperature :
- Configuration :
- Collector- Emitter Voltage VCEO Max :
- Gate-Emitter Leakage Current :
- Maximum Gate Emitter Voltage :
40 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
10,400
In-stock
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onsemi | IGBT Transistors Copak Discrete | Through Hole | TO-3P-3 | + 150 C | Tube | 312 W | Single | 1200 V | 2 V | 50 A | +/- 250 nA | +/- 20 V | ||
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488
In-stock
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Infineon Technologies | IGBT Transistors IGBT PRODUCTS | Through Hole | TO-247-3 | + 175 C | Tube | 326 W | Single | 1200 V | 2.7 V | 50 A | 600 nA | 20 V | |||
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305
In-stock
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IXYS | IGBT Transistors 60 Amps 1200V | Through Hole | TO-247-3 | + 150 C | Tube | 300 W | 1.2 kV | 2.96 V | 50 A | 100 nA | +/- 20 V | ||||
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145
In-stock
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IXYS | IGBT Transistors 50 Amps 1700V 3.3 V Rds | Through Hole | TO-247-3 | + 150 C | Tube | 250 W | Single | 1.7 kV | 2.5 V | 50 A | 100 nA | +/- 20 V | |||
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463
In-stock
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Fairchild Semiconductor | IGBT Transistors 1100 V, 50 A Shorted-anode IGBT | Through Hole | TO-3PN | + 175 C | Tube | 300 W | 1100 V | 2.7 V | 50 A | 500 nA | 25 V | ||||
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4,350
In-stock
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Fairchild Semiconductor | IGBT Transistors 1200V, 25A Field Stop Trench IGBT | Through Hole | TO-247G03-3 | + 175 C | Tube | 428 W | Single | 1200 V | 1.9 V | 50 A | 400 nA | + /- 25 V | |||
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477
In-stock
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Infineon Technologies | IGBT Transistors IGBT PRODUCTS | Through Hole | TO-247-3 | + 175 C | Tube | 326 W | Single | 1200 V | 2.7 V | 50 A | 600 mA | 20 V | |||
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230
In-stock
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Infineon Technologies | IGBT Transistors LOW LOSS DuoPack 1200V 25A | Through Hole | TO-247-3 | + 150 C | Tube | 190 W | Single | 1200 V | 2.2 V | 50 A | 600 nA | 20 V | |||
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258
In-stock
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Infineon Technologies | IGBT Transistors 600V UltraFast IGBT 50A 268W 104nC | Through Hole | TO-247-3 | + 175 C | Tube | 134 W | 600 V | 1.9 V | 50 A | 100 nA | 20 V | ||||
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227
In-stock
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Infineon Technologies | IGBT Transistors IGBT PRODUCTS | Through Hole | TO-247-3 | + 175 C | Tube | 326 W | Single | 1200 V | 2.7 V | 50 A | 600 nA | 20 V | |||
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156
In-stock
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IR / Infineon | IGBT Transistors 600V UltraFast IGBT 60A 330W 140nC | Through Hole | TO-247-3 | + 175 C | Tube | 134 W | 600 V | 1.9 V | 50 A | 70 uA | 20 V | ||||
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200
In-stock
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STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | Through Hole | TO247-3 | + 175 C | Tube | 375 W | Single | 1.2 kV | 1.6 V | 50 A | 250 nA | +/- 20 V | |||
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180
In-stock
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STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | Through Hole | TO247-3 | + 175 C | Tube | 375 W | Single | 1.2 kV | 1.6 V | 50 A | 250 nA | +/- 20 V | |||
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49
In-stock
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IXYS | IGBT Transistors | Through Hole | TO-247-3 | + 150 C | Tube | 250 W | Single | 3 kV | 2.7 V | 50 A | +/- 100 nA | +/- 20 V | |||
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240
In-stock
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Infineon Technologies | IGBT Transistors IGBT PRODUCTS | Through Hole | TO-247-3 | + 175 C | Tube | 326 W | Single | 1200 V | 2.7 V | 50 A | 600 nA | 20 V | |||
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62
In-stock
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Fairchild Semiconductor | IGBT Transistors N-ch / 50A 1000V | Through Hole | TO-3PN | + 150 C | Tube | 156 W | Single | 1000 V | 1.5 V | 50 A | 500 nA | 25 V | |||
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74
In-stock
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Infineon Technologies | IGBT Transistors LOW LOSS DuoPack 1200V 25A | Through Hole | TO-247-3 | + 150 C | Tube | 190 W | Single | 1200 V | 2.2 V | 50 A | 600 nA | 20 V | |||
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100
In-stock
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Infineon Technologies | IGBT Transistors IGBT DISCRETES | Through Hole | TO-247-3 | Tube | 180 W | 1.2 kV | 2.2 V | 50 A | |||||||
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63
In-stock
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Infineon Technologies | IGBT Transistors 1200V Trench IGBT Inductn Cooking 50A | Through Hole | TO-247-3 | + 150 C | Tube | 180 W | Single | 1.2 kV | 1.9 V | 50 A | 100 nA | +/- 30 V | |||
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77
In-stock
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IR / Infineon | IGBT Transistors 600V UltraFast IGBT 50A 268W 104nC | Through Hole | TO-247AD-3 | + 175 C | Tube | 134 W | 600 V | 1.9 V | 50 A | 100 nA | 20 V | ||||
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42
In-stock
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IXYS | IGBT Transistors 30 Amps 1200V | Through Hole | ISOPLUS247-3 | + 150 C | Tube | 200 W | Single | 1.2 kV | 2.4 V | 50 A | 500 nA | +/- 20 V | |||
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220
In-stock
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Infineon Technologies | IGBT Transistors IGBT PRODUCTS | Through Hole | TO-247-3 | + 175 C | Tube | 326 W | Single | 1200 V | 2.7 V | 50 A | 600 mA | 20 V | |||
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230
In-stock
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Infineon Technologies | IGBT Transistors IGBT PRODUCTS | Through Hole | TO-247-3 | + 175 C | Tube | 326 W | Single | 1200 V | 2.7 V | 50 A | 600 mA | 20 V | |||
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19
In-stock
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IXYS | IGBT Transistors 30 Amps 1200V | Through Hole | ISOPLUS247-3 | + 150 C | Tube | 200 W | Single | 1.2 kV | 2.4 V | 50 A | 500 nA | +/- 20 V | |||
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2,400
In-stock
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STMicroelectronics | IGBT Transistors IGBT & Power Bipolar | Through Hole | TO-247-3 | + 175 C | Tube | 326 W | Single | 1200 V | 1.85 V | 50 A | 250 nA | 20 V | |||
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44
In-stock
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Infineon Technologies | IGBT Transistors IGBT PRODUCTS | Through Hole | TO-247-3 | + 150 C | Tube | 231 W | Single | 1.2 kV | 1.5 V | 50 A | 100 nA | +/- 20 V | |||
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431
In-stock
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ROHM Semiconductor | IGBT Transistors 650V 25A IGBT Stop Trench | Through Hole | TO-247-3 | + 175 C | Tube | 174 W | 650 V | 1.6 V | 50 A | +/- 200 nA | +/- 30 V | ||||
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145
In-stock
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onsemi | IGBT Transistors FSII 25A 1200V Welding | Through Hole | TO-247-3 | + 175 C | Tube | 385 W | Single | 1.2 kV | 2 V | 50 A | 200 nA | +/- 20 V | |||
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151
In-stock
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onsemi | IGBT Transistors 1200V/25A IGBT SOLAR/UPS | Through Hole | TO-247 | + 150 C | Tube | 192 W | Single | 1200 V | 2 V | 50 A | 100 nA | 20 V | |||
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437
In-stock
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ROHM Semiconductor | IGBT Transistors 650V 25A IGBT Stop Trench | Through Hole | TO-247-3 | + 175 C | Tube | 174 W | 650 V | 1.6 V | 50 A | +/- 200 nA | +/- 30 V |
