- Manufacture :
- Package / Case :
- Collector- Emitter Voltage VCEO Max :
- Maximum Gate Emitter Voltage :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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51
In-stock
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IXYS | IGBT Transistors 1700V/108A High Voltage XPT IGBT | Through Hole | PLUS247-3 | + 175 C | Tube | 937 W | Single | 1700 V | 3 V | 108 A | 100 nA | +/- 20 V | |||
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50
In-stock
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Infineon Technologies | IGBT Transistors 1200V 108A | Through Hole | TO-247-3 | Tube | 390 W | Single | 1.2 kV | 2 V | 108 A | +/- 30 V | |||||
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12
In-stock
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Infineon Technologies | IGBT Transistors IGBT DISCRETES | Through Hole | TO-247-3 | Tube | 390 W | 1.2 kV | 2 V | 108 A |
