- Manufacture :
- Package / Case :
- Maximum Operating Temperature :
- Collector- Emitter Voltage VCEO Max :
- Collector-Emitter Saturation Voltage :
- Gate-Emitter Leakage Current :
7 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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950
In-stock
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IR / Infineon | IGBT Transistors 600V UltraFast 8-60kHz | Through Hole | TO-220-3 | Tube | 49 W | Single | 600 V | 1.95 V | 11 A | +/- 20 V | ||||||
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800
In-stock
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Infineon Technologies | IGBT Transistors 600V Low-Vceon | Through Hole | TO-220FP-3 | + 175 C | Tube | 38 W | Single | 600 V | 1.8 V | 11 A | 100 nA | +/- 20 V | ||||
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660
In-stock
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STMicroelectronics | IGBT Transistors PowerMESH" IGBT | Through Hole | TO-220-3 | + 150 C | Tube | 28 W | Single | 600 V | 2 V | 11 A | 150 uA | +/- 20 V | ||||
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245
In-stock
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Infineon Technologies | IGBT Transistors 1200V UltraFast 4-20kHz | Through Hole | TO-247-3 | Tube | 60 W | Single | 1.2 kV | 3.17 V | 11 A | +/- 20 V | ||||||
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450
In-stock
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Infineon Technologies | IGBT Transistors 1200V UltraFast 4-20kHz | Through Hole | TO-262-3 | Tube | 60 W | Single | 1.2 kV | 3.17 V | 11 A | +/- 20 V | ||||||
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112
In-stock
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Infineon Technologies | IGBT Transistors 1200V UltraFast 4-20kHz | Through Hole | TO-247-3 | Tube | 60 W | Single | 1.2 kV | 3.17 V | 11 A | +/- 20 V | ||||||
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519
In-stock
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IR / Infineon | IGBT Transistors 600V TRENCH IGBT ULTRAFAST | Through Hole | TO-220AB-3 | + 175 C | Tube | 58 W | Single | 600 V | 2.2 V | 11 A | 100 nA | +/- 20 V |